journal article·2021-03-10

Piezocatalytic Effect Induced Hydrogen Production from Water over Non-noble Metal Ni Deposited Ultralong GaN Nanowires

Mingxiang Zhang, Shiyin Zhao, Zhicheng Zhao, Shun Li, Fei Wang

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Abstract

Piezoelectric material-based catalysis that relies on an external stress-induced piezopotential has been demonstrated to be an effective strategy toward various chemical reactions. In this work, non-noble metal Ni-decorated ultralong monocrystal GaN nanowires (NWs) were prepared through a chemical vapor deposition (CVD) technique, followed by a photodeposition method. The piezocatalytic activity of the GaN NWs was enhanced by ∼9 times after depositing the Ni cocatalyst, generating hydrogen gas of ∼88.3 μmol·g–1·h–1 under ultrasonic vibration (110 W and 40 kHz), which is comparable to that of Pt-loaded GaN NWs. Moreover, Ni/GaN NWs with smaller diameters (∼100 nm) demonstrated superior piezocatalytic efficiency, which can be attributed to the large piezoelectric potential evidenced by both finite-element analysis and piezoresponse force microscopy measurements. These results demonstrate the promising application potential of non-noble metal loaded GaN nanostructures in hydrogen generation driven by weak mechanical energy from the surrounding environment.
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Research context

OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China

School of Environmental Science and Engineering, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, Southern University of Science and Technology, Shenzhen 518055, China

Foshan (Southern China) Institute for New Materials, Foshan 528200, Guangdong, China

Institute of Quantum and Sustainable Technology (IQST), School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China

GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology, Shenzhen 518055, China

Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen 518055, China

Funding

Science, Technology and Innovation Commission of Shenzhen Municipality · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province

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