A Sensitive Visible Light Photodetector Using Cobalt-Doped Zinc Ferrite Oxide Thin Films
Source abstract
Abstract
In this study, a highly sensitive trilayer photodetector using Co-doped ZnFe2O4 thin films annealed at 400 °C was synthesized successfully. Trilayer-photodetector devices with a film stack of 5 at % Co-doped-zinc-ferrite-thin-film/indium-tin-oxide on p+-Si substrates were fabricated by radio-frequency sputtering. The absorbance spectra, photoluminescence spectra, transmission electron microscopy images, and I–V characteristics under various conditions were comprehensively investigated. The outstanding performance of trilayer-photodector devices was measured, including a high photosensitivity of 181 and a fast photoresponse time with a rise time of 10.6 ms and fall time of 9.9 ms under 630 nm illumination. Therefore, the Co-doped ZnFe2O4 thin film is favorable for potential photodetector applications in visible light regions.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Funding
Ministry of Science and Technology, Taiwan
References (57)
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