journal article·2019-01-09

Solution-Processed Double-Junction Quantum-Dot Light-Emitting Diodes with an EQE of Over 40%

Piaoyang Shen, Fan Cao, Haoran Wang, Bin Wei, Feijiu Wang, Xiao Wei Sun, Xuyong Yang

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Abstract

Despite the rapid development in quantum-dot light-emitting diodes (QD-LEDs) with a single junction, it remains a big challenge to make tandem QD-LEDs with high performance. Here, we report solution-processed double-junction tandem QD-LEDs with a high external quantum efficiency of 42.2% and a high current efficiency of 183.3 cd A-1, which are comparable to those of the best vacuum-deposited tandem organic LEDs. Such high-efficiency devices are achieved by interface engineering of fully optimized single light-emitting units, which improves carriers' transport/injection balance and suppresses exciton quenching induced by ZnO, and design of an effective interconnecting layer consisting of poly(4-butylphenyl-diphenylamine) (poly-TPD)-mixed poly(9-vinylcarbazole) (PVK)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/polyethylenimine ethoxylated-modified ZnO.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Perovskite Materials and Applications · Organic Light-Emitting Diodes Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, China

Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xue-Yuan Road, Shenzhen 518055, China

Funding

Shanghai Science and Technology Committee · Shanghai Rising-Star Program · National Key Research and Development Program of China

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