journal article·2020-05-20

High Thermoelectric Performance in SnTe Nanocomposites with All-Scale Hierarchical Structures

Qinghui Jiang, Huishan Hu, Junyou Yang, Jiwu Xin, Sihui Li, Giuseppe Viola, Haixue Yan

ACS Applied Materials & Interfaces· Volume 12· Issue 20
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Abstract

SnTe has attracted considerable attention as an environmentally friendly thermoelectric material. The thermoelectric figure of merit ZT value is related to low thermal conductivity that can be successfully realized using fabrication of nanostructures. However, the practical realization of SnTe nanostructured composites is often limited by long reaction time, low yield, and aggregation of nanoparticles. Herein, a simple substitution reaction between Cu2Se and SnTe was adopted to realize Cu1.75Te-SnTe nanocomposites with unique all-scale hierarchical structures. On the atomic level, the substitution SeTe is introduced into the lattice via the reaction between Cu2Se and SnTe; on the nanoscopic level, Cu1.75Te nanoinclusions with 10 nm size are evenly distributed at the grain boundaries of SnTe with average grain size less than 1 μm; on the mesoscopic level, these SnTe grains stack up to larger particles (10–20 μm), which are further surrounded by Cu1.75Te grains with a predominant size of 1–2 μm. These hierarchical structures, together with additional SnTe stacking faults, can effectively scatter phonons with different wavelengths to reduce the lattice thermal conductivity. At 873 K, a thermal conductivity value of 0.49 W·m–1·K–1 was obtained in the SnTe nanocomposite sample with 0.057 Cu1.75Te molar content, which is 40% lower than that of the pristine SnTe. By using the same approach for scattering phonons across integrated length scales, a ZT value of 1.02 (∼80% enhancement, compared with that of the pristine SnTe) was achieved at 873 K for the sample of the SnTe nanocomposite with 0.034 Cu1.75Te molar content. This large increase in ZT values highlights the role of multiscale hierarchical architecture in controlling phonon scattering, offering a viable alternative to realize higher performance thermoelectric bulk materials.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Thermal Radiation and Cooling Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China

School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS, U.K.

Funding

Royal Society · State Key Laboratory of New Ceramics and Fine Processing · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China

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