journal article·2020-03-04

Wafer-Scale Growth of 2D PtTe2 with Layer Orientation Tunable High Electrical Conductivity and Superior Hydrophobicity

Mengjing Wang, Tae-Jun Ko, Mashiyat Sumaiya Shawkat, Sang Sub Han, Emmanuel Okogbue, Hee-Suk Chung, Tae-Sung Bae, Shahid Sattar, Jaeyoung Gil, Chanwoo Noh, Kyu Hwan Oh, YounJoon Jung, J. Andreas Larsson, Yeonwoong Jung

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Abstract

Platinum ditelluride (PtTe2) is an emerging semimetallic two-dimensional (2D) transition-metal dichalcogenide (TMDC) crystal with intriguing band structures and unusual topological properties. Despite much devoted efforts, scalable and controllable synthesis of large-area 2D PtTe2 with well-defined layer orientation has not been established, leaving its projected structure–property relationship largely unclarified. Herein, we report a scalable low-temperature growth of 2D PtTe2 layers on an area greater than a few square centimeters by reacting Pt thin films of controlled thickness with vaporized tellurium at 400 °C. We systematically investigated their thickness-dependent 2D layer orientation as well as its correlated electrical conductivity and surface property. We unveil that 2D PtTe2 layers undergo three distinct growth mode transitions, i.e., horizontally aligned holey layers, continuous layer-by-layer lateral growth, and horizontal-to-vertical layer transition. This growth transition is a consequence of competing thermodynamic and kinetic factors dictated by accumulating internal strain, analogous to the transition of Frank–van der Merwe (FM) to Stranski–Krastanov (SK) growth in epitaxial thin-film models. The exclusive role of the strain on dictating 2D layer orientation has been quantitatively verified by the transmission electron microscopy (TEM) strain mapping analysis. These centimeter-scale 2D PtTe2 layers exhibit layer orientation tunable metallic transports yielding the highest value of ∼1.7 × 106 S/m at a certain critical thickness, supported by a combined verification of density functional theory (DFT) and electrical measurements. Moreover, they show intrinsically high hydrophobicity manifested by the water contact angle (WCA) value up to ∼117°, which is the highest among all reported 2D TMDCs of comparable dimensions and geometries. Accordingly, this study confirms the high material quality of these emerging large-area 2D PtTe2 layers, projecting vast opportunities employing their tunable layer morphology and semimetallic properties from investigations of novel quantum phenomena to applications in electrocatalysis.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States

Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States

Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea

Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea

Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå SE 97187, Sweden

Department of Chemistry, Seoul National University, Seoul 08826, South Korea

Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United States

Funding

University of Central Florida · Kempestiftelserna · European Regional Development Fund · Korea Coast Guard · National Research Foundation of Korea · Knut och Alice Wallenbergs Stiftelse · Korea Institute of Energy Technology Evaluation and Planning · Division of Civil, Mechanical and Manufacturing Innovation

References (63)

Show source-provided references
1. 10.1039/C7NR01501A10.1039/C7NR01501A ↗
2. 10.1021/acsnano.9b0027710.1021/acsnano.9b00277 ↗
3. 10.1038/s41467-018-02918-510.1038/s41467-018-02918-5 ↗
4. 10.1038/natrevmats.2016.5510.1038/natrevmats.2016.55 ↗
5. 10.1021/acsami.9b0107810.1021/acsami.9b01078 ↗
6. 10.1002/adma.20160423010.1002/adma.201604230 ↗
7. 10.1021/acs.nanolett.9b0172610.1021/acs.nanolett.9b01726 ↗
8. 10.1021/acs.nanolett.5b0096410.1021/acs.nanolett.5b00964 ↗
9. 10.1038/ncomms1421610.1038/ncomms14216 ↗
10. 10.1021/acsami.9b0900010.1021/acsami.9b09000 ↗
11. 10.1038/s41467-018-03935-010.1038/s41467-018-03935-0 ↗
12. 10.1002/smll.20180003210.1002/smll.201800032 ↗
13. 10.1103/PhysRevLett.121.08680410.1103/PhysRevLett.121.086804 ↗
14. 10.1016/j.scib.2019.05.02310.1016/j.scib.2019.05.023 ↗
15. 10.1103/PhysRevB.97.24510910.1103/PhysRevB.97.245109 ↗
16. 10.1103/PhysRevB.96.12510210.1103/PhysRevB.96.125102 ↗
17. 10.1103/PhysRevB.94.12111710.1103/PhysRevB.94.121117 ↗
18. 10.1038/nmat503110.1038/nmat5031 ↗
19. 10.1038/s41467-017-00280-610.1038/s41467-017-00280-6 ↗
20. 10.1038/s41699-018-0085-z10.1038/s41699-018-0085-z ↗
21. 10.1021/acsnano.8b0454010.1021/acsnano.8b04540 ↗
22. 10.1021/acs.nanolett.8b0058310.1021/acs.nanolett.8b00583 ↗
23. 10.1002/adfm.20180374610.1002/adfm.201803746 ↗
24. 10.1021/acsami.7b0508310.1021/acsami.7b05083 ↗
25. 10.1002/adfm.20150540210.1002/adfm.201505402 ↗
26. 10.1021/nl502570f10.1021/nl502570f ↗
27. 10.1021/acs.nanolett.7b0191410.1021/acs.nanolett.7b01914 ↗
28. 10.1038/nnano.2015.4010.1038/nnano.2015.40 ↗
29. 10.1038/nnano.2009.5810.1038/nnano.2009.58 ↗
30. 10.1021/nl501106v10.1021/nl501106v ↗
31. 10.1021/nn507207310.1021/nn5072073 ↗
32. 10.1021/acsami.7b1198310.1021/acsami.7b11983 ↗
33. 10.1002/admi.20180038210.1002/admi.201800382 ↗
34. 10.1021/acs.nanolett.8b0506110.1021/acs.nanolett.8b05061 ↗
35. 10.1039/C6NR07965B10.1039/C6NR07965B ↗
36. 10.1038/s41598-018-34222-z10.1038/s41598-018-34222-z ↗
37. 10.1016/0040-6090(72)90412-910.1016/0040-6090(72)90412-9 ↗
38. 10.1016/0039-6028(88)90858-810.1016/0039-6028(88)90858-8 ↗
39. 10.1063/1.35656210.1063/1.356562 ↗
40. 10.1103/PhysRevLett.64.103910.1103/PhysRevLett.64.1039 ↗
41. 10.1063/1.34496910.1063/1.344969 ↗
42. 10.9729/AM.2015.45.2.10110.9729/AM.2015.45.2.101 ↗
43. 10.1016/S0304-3991(98)00035-710.1016/S0304-3991(98)00035-7 ↗
44. 10.1039/C6NR08958E10.1039/C6NR08958E ↗
45. 10.1038/srep2700910.1038/srep27009 ↗
46. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
47. 10.1038/s41467-018-03436-010.1038/s41467-018-03436-0 ↗
48. 10.1021/nl403620g10.1021/nl403620g ↗
49. 10.1103/PhysRevB.88.07540910.1103/PhysRevB.88.075409 ↗
50. 10.1002/adma.20170235910.1002/adma.201702359 ↗
51. 10.1186/s11671-017-2030-z10.1186/s11671-017-2030-z ↗
52. 10.1021/la501832810.1021/la5018328 ↗
53. 10.1039/C7CE01162H10.1039/C7CE01162H ↗
54. 10.1021/acsanm.8b0046710.1021/acsanm.8b00467 ↗
55. 10.1146/annurev.matsci.38.060407.13243410.1146/annurev.matsci.38.060407.132434 ↗
56. 10.1002/app.1969.07013081510.1002/app.1969.070130815 ↗
57. 10.1088/0022-3719/19/7/01110.1088/0022-3719/19/7/011 ↗
58. 10.1016/j.physleta.2018.06.00910.1016/j.physleta.2018.06.009 ↗
59. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
60. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
61. 10.1088/0953-8984/22/2/02220110.1088/0953-8984/22/2/022201 ↗
62. 10.1103/PhysRevB.83.19513110.1103/PhysRevB.83.195131 ↗
63. 10.1109/MCSE.2007.5510.1109/MCSE.2007.55 ↗