journal article·2014-02-12

Parallel Carbon Nanotube Stripes in Polymer Thin Film with Remarkable Conductive Anisotropy

Jinrui Huang, Yutian Zhu, Wei Jiang, Jinghua Yin, Qingxin Tang, Xiaodong Yang

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Abstract

In our previous study ( Mao et al. J. Phys. Chem. Lett. 2013 , 4 , 43 - 47 ), we proposed a novel method, that is, the shear-flow-induced hierarchical self-assembly of two-dimensional fillers (octadecylamine-functionalized graphene) into the well-ordered parallel stripes in a polymer matrix, to fabricate the anisotropic conductive materials. In this study, we extend this method to one-dimensional multiwalled carbon nanotubes (MWCNTs). Under the induction of shear flow, the dispersed poly(styrene ethylene/butadiene-styrene) (SEBS) phase and MWCNTs can spontaneously assemble into well-ordered parallel stripes in the polypropylene (PP) thin film. The electrical measurements indicate that the electrical resistivity in the direction parallel to the stripes is almost 6 orders of magnitude lower than that in the perpendicular direction, which is by far the most striking conductive anisotropy for the plastic anisotropic conductive materials. In addition, it is found that the size of the MWCNT stripe as well as the electrical property of the resulting anisotropic conductive thin film can be well-controlled by the gap of the shear cell.
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Research context

OpenAlex topics: Carbon Nanotubes in Composites · Nanopore and Nanochannel Transport Studies · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People’s Republic of China

University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

Key Laboratory of UV Light Emitting Materials and Technology under Ministry of Education, Northeast Normal University, Changchun 130024, People’s Republic of China

Changchun Institute of Technology, Changchun 130012, People’s Republic of China

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