Selective Enhancement in Phonon Scattering Leads to a High Thermoelectric Figure-of-Merit in Graphene Oxide-Encapsulated ZnO Nanocomposites

ZnO is a promising candidate for use as an environmentally friendly thermoelectric (TE) material. However, high thermal conductivity leading to a poor TE figure-of-merit (zT) needs to be addressed to achieve a significant TE efficiency for commercial applications. Here, we demonstrate that selective enhancement in phonon scattering leads to an increase in the zT of ZnO because of Al doping and reduced graphene oxide (RGO) encapsulation. These nanocomposites are synthesized via a facile and scalable method. The incorporation of 1 at% Al with 1.5 wt % RGO into ZnO has been found to show significant improvement in zT (0.52 at 1100 K), which is an order of magnitude larger compared to that of bare undoped ZnO. Photoluminescence and X-ray photoelectron spectroscopy measurements confirm that RGO encapsulation significantly quenches surface oxygen vacancies in ZnO along with nucleation of new interstitial Zn donor states. Tunneling spectroscopy performed on bare as well as composite particles reveals that the band gap of ∼3.4 eV for bare ZnO reduces effectively to ∼0.5 eV upon RGO encapsulation, facilitating charge transport. The electrical conductivity also benefits from high densification (>95%) achieved using the spark plasma sintering method, which also aids in reduction of graphene oxide into RGO. The same Al doping and RGO capping synergistically bring about drastic reduction of thermal conductivity, through enhanced interfacial and point-defect-phonon scatterings. These opposing effects on electrical and thermal conductivities lead to enhancement in the power factors as well as the zT value. Overall, a practically viable route has been demonstrated for the synthesis of oxide-RGO TE materials, which could find their potential applications in high-temperature TE power generation.