Interfacial Triggering of Conductive Filament Growth in Organic Flexible Memristor for High Reliability and Uniformity
Source abstract
Abstract
We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode-polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Conducting polymers and applications · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-ku, Seoul 08826, Republic of Korea
Department of Creative Convergence Engineering, Hanbat National University, Yuseong-ku, Daejeon 305-719, Republic of Korea
Funding
Ministry of Education · Samsung Display Co., Ltd.
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