Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes
Source abstract
Abstract
We report highly efficient inverted quantum-dot light emitting diodes (QLEDs) using an Al doped ZnO (AZO)/Li doped ZnO (LZO) stack electron transport layer (ETL). An introduction of the LZO layer on AZO improved the current and power efficiencies of the green (G-) QLEDs from 10.5 to 34.0 cd A –1 and from 5.4 to 29.6 lm W –1, respectively. The red (R-), G-, and blue (B-) QLEDs fabricated in this work exhibited the maximum external quantum efficiencies (EQEs) of 8.4, 12.5, and 4.3%, respectively. It is found from time-resolved photoluminescence (PL) and transient electroluminescence (EL) decay that exciton loss at the interface between the ETL and the emission layer can be significantly reduced by introducing LZO.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Funding
Korea Institute of Energy Technology Evaluation and Planning
References (43)
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