Skyrmions in Magnetic Tunnel Junctions
Source abstract
Abstract
In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMIs) by a spin-polarized current with the assistance of stray fields from the pinned layer. The size, stability, and number of created skyrmions can be tuned by either the DMI strength or the stray field distribution. The interaction between the stray field and the DMI effective field is discussed. A device with multilevel tunneling magnetoresistance is proposed, which could pave the ways for skyrmion-MTJ-based multibit storage and artificial neural network computation. Our results may facilitate the efficient nucleation and electrical detection of skyrmions.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fert Beijing Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Beijing 100191, China
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266101, China
School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China
Funding
Ministry of Science and Technology of the People's Republic of China · China Postdoctoral Science Foundation · National Natural Science Foundation of China · Chinese University of Hong Kong · Beijing Municipal Science and Technology Commission · Shenzhen Fundamental Research Fund
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