journal article·2016-11-23

CO2 Laser Direct Written MOF-Based Metal-Decorated and Heteroatom-Doped Porous Graphene for Flexible All-Solid-State Microsupercapacitor with Extremely High Cycling Stability

Aniruddha Basu, Kingshuk Roy, Neha Sharma, Shyamapada Nandi, Ramanathan Vaidhyanathan, Sunit Rane, Chandrashekhar Rode, Satishchandra Ogale

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Abstract

Over the past decade, flexible and wearable microelectronic devices and systems have gained significant importance. Because portable power source is an essential need of such wearable devices, currently there is considerable research emphasis on the development of planar interdigitated micro energy -torage devices by employing diverse precursor materials to obtain functional materials (functional carbon, oxides, etc.) with the desirable set of properties. Herein we report for the first time the use of metal organic framework (MOF) and zeolitic imidazolate framework (ZIF-67) for high-wavelength photothermal laser direct writing of metal-decorated, heteroatom-doped, porous few-layer graphene electrodes for microsupercapacitor application. We argue that the specific attributes of MOF as a precursor and the high-wavelength laser writing approach (which creates extremely high localized and transient temperature (>2500 °C) due to strong absorption by lattice vibrations) are together responsible for the peculiar interesting properties of the carbon material thus synthesized, thereby rendering extremely high cycling stability to the corresponding microsupercapacitor device. Our device exhibits near 100% retention after 200 000 cycles as well as stability under 150° bending.
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Research context

OpenAlex topics: Supercapacitor Materials and Fabrication · Advanced Sensor and Energy Harvesting Materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Chemical Laboratory (CSIR-NCL), Dr. Homi Bhabha Road, Pune 411008, India

Academy of Scientific and Innovative Research (AcSIR), Anusandhan Bhawan, 2, Rafi Marg, New Delhi 110 001, New Delhi, India

Centre for Materials for Electronics Technology (C-MET), Panchawati Road, Pashan, Pune, Maharashtra 411008, India

Funding

Council of Scientific and Industrial Research · Department of Science and Technology, Ministry of Science and Technology · Indian Institute of Science Education and Research Pune

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