Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors
Source abstract
Abstract
Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO3 memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany
NaMLab gGmbH, Dresden 01187, Germany
Institute of Semiconductors and Microsystems, Technische Universität Dresden, Dresden 01187, Germany
Institute for Integrative Nanosciences, IFW Dresden, Dresden 01069, Germany
HZDR Innovation GmbH, Dresden 01328, Germany
Institut für Experimentelle Physik, Technische Universität Bergakademie Freiberg, 09596 Freiberg, Germany
Materials Science Center and Faculty of Physics, Philipps-Universität Marburg, Marburg 35032, Germany
Funding
Helmholtz Association · Deutsche Forschungsgemeinschaft · China Scholarship Council
References (47)
Show source-provided references
1. Vogel E. · Nat. Nanotechnol. · 2007 · 2 · 2510.1038/nnano.2006.142 ↗
2. Xia Q. · Nano Lett. · 2009 · 9 · 364010.1021/nl901874j ↗
3. Waser R. · Nat. Mater. · 2007 · 6 · 83310.1038/nmat2023 ↗
4. Lee M.-J. · Nat. Mater. · 2011 · 10 · 62510.1038/nmat3070 ↗
5. Borghetti J. · Nature · 2010 · 464 · 87310.1038/nature08940 ↗
6. Linn E. · Nanotechnology · 2012 · 23 · 30520510.1088/0957-4484/23/30/305205 ↗
7. Jo S. H. · Nano Lett. · 2010 · 10 · 129710.1021/nl904092h ↗
8. You T. · Adv. Funct. Mater. · 2014 · 24 · 335710.1002/adfm.201303365 ↗
9. Du N. · J. Appl. Phys. · 2014 · 115 · 12450110.1063/1.4869262 ↗
10. Chae S. C. · Adv. Mater. · 2008 · 20 · 115410.1002/adma.200702024 ↗
11. Kwon D.-H. · Nat. Nanotechnol. · 2010 · 5 · 14810.1038/nnano.2009.456 ↗
12. Jiang A. Q. · Adv. Mater. · 2011 · 23 · 127710.1002/adma.201004317 ↗
13. Xu Z. · Small · 2012 · 8 · 127910.1002/smll.201101796 ↗
14. Kim T. W. · Adv. Mater. · 2012 · 24 · 82810.1002/adma.201104266 ↗
15. Yang J. J. · Adv. Mater. · 2009 · 21 · 375410.1002/adma.200900822 ↗
16. Guo Y. · Nanotechnology · 2013 · 24 · 27520110.1088/0957-4484/24/27/275201 ↗
17. Rozenberg M. · Phys. Rev. Lett. · 2004 · 92 · 17830210.1103/PhysRevLett.92.178302 ↗
18. Choi T. · Science · 2009 · 324 · 6310.1126/science.1168636 ↗
19. Kim W.-H. · ACS Appl. Mater. Interfaces · 2014 · 6 · 634610.1021/am501630k ↗
20. Hong S. · Adv. Mater. · 2013 · 25 · 233910.1002/adma.201204839 ↗
21. Rana A. · Adv. Funct. Mater. · 2014 · 24 · 396210.1002/adfm.201400110 ↗
22. Tsurumaki A. · Adv. Funct. Mater. · 2012 · 22 · 104010.1002/adfm.201102883 ↗
23. Yin K. · Appl. Phys. Lett. · 2010 · 97 · 04210110.1063/1.3467838 ↗
24. Shen W. · Appl. Phys. Lett. · 2012 · 100 · 13350510.1063/1.3701270 ↗
25. Wu L. · J. Appl. Phys. · 2014 · 115 · 17D71610.1063/1.4865217 ↗
26. Yang J. J. · Nat. Nanotechnol. · 2008 · 3 · 42910.1038/nnano.2008.160 ↗
27. Sawa A. · Mater. Today · 2008 · 11 · 2810.1016/S1369-7021(08)70119-6 ↗
28. Yang Y. · Nanoscale · 2013 · 5 · 1007610.1039/c3nr03472k ↗
29. Schroeder H. · J. Appl. Phys. · 2010 · 107 · 05451710.1063/1.3319591 ↗
30. Shibuya K. · Adv. Mater. · 2010 · 22 · 41110.1002/adma.200901493 ↗
31. Ge C. · Appl. Phys. Lett. · 2011 · 99 · 06350910.1063/1.3624849 ↗
32. Sreenivas K. · J. Appl. Phys. · 1994 · 75 · 23210.1063/1.355889 ↗
33. Maeder T. · Microelectron. Eng. · 1995 · 29 · 17710.1016/0167-9317(95)00139-5 ↗
34. Mizoguchi T. · Appl. Phys. Lett. · 2011 · 98 · 09190910.1063/1.3560464 ↗
35. Kimmel A. V. · Phys. Rev. Lett. · 2012 · 109 · 11760110.1103/PhysRevLett.109.117601 ↗
36. Yang Q. · J. Appl. Phys. · 2013 · 113 · 18411010.1063/1.4804941 ↗
37. Yoon J. H. · Adv. Mater. · 2013 · 25 · 198710.1002/adma.201204572 ↗
38. Wang Z. · Nanoscale · 2013 · 5 · 449010.1039/c3nr33692a ↗
39. Blanc J. · Phys. Rev. B · 1971 · 4 · 354810.1103/PhysRevB.4.3548 ↗
40. El Kamel F. · J. Appl. Phys. · 2006 · 99 · 09410710.1063/1.2196112 ↗
41. Waser R. · J. Am. Ceram. Soc. · 1991 · 74 · 193410.1111/j.1151-2916.1991.tb07812.x ↗
42. Strukov D. B. · Appl. Phys. A Mater.Sci. Process. · 2009 · 94 · 51510.1007/s00339-008-4975-3 ↗
43. Simmons J. · Phys. Rev. Lett. · 1965 · 15 · 96710.1103/PhysRevLett.15.967 ↗
44. Dimoulas A. · Appl. Phys. Lett. · 2006 · 89 · 25211010.1063/1.2410241 ↗
45. 10.1002/pssa.20143129810.1002/pssa.201431298 ↗
46. Ou X. · ACS Appl. Mater. Interfaces · 2013 · 5 · 1276410.1021/am404144c ↗
47. Bersuker G. · J. Appl. Phys. · 2011 · 110 · 12451810.1063/1.3671565 ↗