DataVXACS Applied Materials & InterfacesPaper
journal article·2016-12-14

Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films

Nhat Hong Tran Nguyen, Truong Huu Nguyen, Yi-ren Liu, Masoud Aminzare, Anh Tuan Thanh Pham, Sunglae Cho, Deniz P. Wong, Kuei-Hsien Chen, Tosawat Seetawan, Ngoc Kim Pham, Hanh Kieu Thi Ta, Vinh Cao Tran, Thang Bach Phan

ACS Applied Materials & Interfaces· Volume 8· Issue 49
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Source abstract

Abstract

We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussed in terms of film crystallinity, which is subject to the dopants' radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and 5-fold enhancement in the figure of merit ZT have been achieved at 110 °C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermal conductivity.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Magnetic and transport properties of perovskites and related materials · Physics of Superconductivity and Magnetism

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh City, Vietnam

Faculty of Applied Science, University of Technology, Vietnam National University, HoChiMinh City, Vietnam

Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

Department of Physics, University of Ulsan, Ulsan 13557 Korea

Center of Excellence on Alternative Energy, Research Development Institute, Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, 680 Nittayo, Mueang District, Sakon Nakhon, 74000, Thailand

Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh City, Vietnam

Funding

National Foundation for Science and Technology Development

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