DataVXACS Applied Materials & InterfacesPaper
journal article·2017-02-01Open access

Formation of a K—In—Se Surface Species by NaF/KF Postdeposition Treatment of Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers

Evelyn Handick, Patrick Reinhard, Regan G. Wilks, Fabian Pianezzi, Thomas Kunze, Dagmar Kreikemeyer-Lorenzo, Lothar Weinhardt, Monika Blum, Wanli Yang, Mihaela Gorgoi, Eiji Ikenaga, Dominic Gerlach, Shigenori Ueda, Yoshiyuki Yamashita, Toyohiro Chikyow, Clemens Heske, Stephan Buecheler, Ayodhya N. Tiwari, Marcus Bär

ACS Applied Materials & Interfaces· Volume 9· Issue 4
Publisher pageOpen full text
Source abstract

Abstract

High Resolution Image Download MS PowerPoint Slide A NaF/KF postdeposition treatment (PDT) has recently been employed to achieve new record efficiencies of Cu(In,Ga)Se 2 (CIGSe) thin film solar cells. We have used a combination of depth-dependent soft and hard X-ray photoelectron spectroscopy as well as soft X-ray absorption and emission spectroscopy to gain detailed insight into the chemical structure of the CIGSe surface and how it is changed by different PDTs. Alkali-free CIGSe, NaF-PDT CIGSe, and NaF/KF-PDT CIGSe absorbers grown by low-temperature coevaporation have been interrogated. We find that the alkali-free and NaF-PDT CIGSe surfaces both display the well-known Cu-poor CIGSe chemical surface structure. The NaF/KF-PDT, however, leads to the formation of bilayer structure in which a K—In—Se species covers the CIGSe compound that in composition is identical to the chalcopyrite structure of the alkali-free and NaF-PDT absorber.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner Platz 1, 14109 Berlin, Germany

Laboratory of Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials and Science and Technology, Überlandstraße 129, 8600 Dübendorf, Switzerland

Energy Materials In-Situ Laboratory Berlin, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany

Institute for Photon Science and Synchrotron Radiation (IPS) and Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), 4505 S. Maryland Parkway, Las Vegas, Nevada 89154-4003, United States

Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States

Institute for Nanospectroscopy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany

SPring-8/JASRI, 1-1-1 Koto, Sayo-cho, Hyogo 679-5198, Japan

MANA/Nano-Electronics Materials Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Synchrotron X-ray Station at SPring-8, NIMS. 1-1-1 Kouto, Sayo-cho, Hyogo 679-5148, Japan

Quantum Beam Unit, NIMS, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan

Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany

Funding

European Commission · Helmholtz-Gemeinschaft · Robert Bosch Stiftung · Staatssekretariat f?r Bildung, Forschung und Innovation

References (53)

Show source-provided references
1. 10.1002/pssr.20160019910.1002/pssr.201600199 ↗
2. Kamada, R.; Yagioka, T.; Adachi, S.; Handa, A.; Tai, K. F.; Kato, T.; Sugimoto, H.New World Record Cu(In, Ga) (Se, S)2 Thin Film Solar Cell Efficiency beyond 22%. In2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC); 2016; pp1287–1291.10.1109/PVSC.2016.7749822 ↗
3. 10.1002/pssr.20140952010.1002/pssr.201409520 ↗
4. 10.1038/nmat378910.1038/nmat3789 ↗
5. 10.1063/1.367960410.1063/1.3679604 ↗
6. 10.1002/pip.51510.1002/pip.515 ↗
7. 10.1016/S0927-0248(99)00026-410.1016/S0927-0248(99)00026-4 ↗
8. 10.1063/1.11578310.1063/1.115783 ↗
9. 10.1016/j.solmat.2012.01.00410.1016/j.solmat.2012.01.004 ↗
10. 10.1021/acs.nanolett.5b0058410.1021/acs.nanolett.5b00584 ↗
11. 10.1021/acsami.5b0923110.1021/acsami.5b09231 ↗
12. 10.1016/j.tsf.2014.10.08810.1016/j.tsf.2014.10.088 ↗
13. 10.1007/s10853-016-9969-510.1007/s10853-016-9969-5 ↗
14. 10.1038/nmat312210.1038/nmat3122 ↗
15. Briggs D. · 1983
16. 10.1016/j.nima.2008.12.24410.1016/j.nima.2008.12.244 ↗
17. 10.1063/1.280833410.1063/1.2808334 ↗
18. Ueda S. · 2010 · 1234 · 403
19. 10.1016/j.elspec.2013.01.00910.1016/j.elspec.2013.01.009 ↗
20. 10.1016/j.elspec.2013.04.00410.1016/j.elspec.2013.04.004 ↗
21. 10.1002/(SICI)1096-9918(199808)26:9<642::AID-SIA408>3.0.CO;2-310.1002/(SICI)1096-9918(199808)26:9<642::AID-SIA408>3.0.CO;2-3 ↗
22. 10.1006/adnd.2000.084910.1006/adnd.2000.0849 ↗
23. 10.1016/j.adt.2005.12.00210.1016/j.adt.2005.12.002 ↗
24. 10.1002/sia.74021030210.1002/sia.740210302 ↗
25. 10.1063/1.114598510.1063/1.1145985 ↗
26. Handick, E.; Reinhard, P.; Wilks, R. G.; Pianezzi, F.; Félix, R.; Gorgoi, M.; Kunze, T.; Buecheler, S.; Tiwari, A. N.; Bär, M.NaF/KF Post-Deposition Treatments and Their Influence on the Structure of Cu(In,Ga)Se2 Absorber Surfaces. In2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC); 2016; pp17–21.10.1109/PVSC.2016.7749400 ↗
27. 10.1021/acs.jpcc.5b0763910.1021/acs.jpcc.5b07639 ↗
28. 10.1063/1.142840810.1063/1.1428408 ↗
29. 10.1063/1.304678010.1063/1.3046780 ↗
30. 10.1063/1.35302010.1063/1.353020 ↗
31. 10.1016/0379-6787(91)90034-M10.1016/0379-6787(91)90034-M ↗
32. 10.1063/1.157051610.1063/1.1570516 ↗
33. 10.1021/ic50128a04510.1021/ic50128a045 ↗
34. 10.1116/1.57104010.1116/1.571040 ↗
35. 10.1016/S0169-4332(96)00099-210.1016/S0169-4332(96)00099-2 ↗
36. 10.1063/1.33534110.1063/1.335341 ↗
37. Moulder J. F. · 1992
38. 10.1103/PhysRevB.45.916310.1103/PhysRevB.45.9163 ↗
39. 10.1063/1.43963410.1063/1.439634 ↗
40. 10.1016/j.elspec.2010.05.01210.1016/j.elspec.2010.05.012 ↗
41. 10.1063/1.35406310.1063/1.354063 ↗
42. 10.1116/1.57755910.1116/1.577559 ↗
43. 10.1039/c3ra44624g10.1039/c3ra44624g ↗
44. 10.1103/PhysRevB.39.1112510.1103/PhysRevB.39.11125 ↗
45. 10.1103/PhysRevB.41.92810.1103/PhysRevB.41.928 ↗
46. 10.1143/JPSJ.54.362810.1143/JPSJ.54.3628 ↗
47. 10.1021/acs.chemmater.5b0233510.1021/acs.chemmater.5b02335 ↗
48. 10.1016/0038-1098(94)00708-X10.1016/0038-1098(94)00708-X ↗
49. 10.1116/1.57801110.1116/1.578011 ↗
50. 10.1209/0295-5075/26/2/00210.1209/0295-5075/26/2/002 ↗
51. 10.1103/PhysRevB.8.283310.1103/PhysRevB.8.2833 ↗
52. 10.1006/adnd.1993.101310.1006/adnd.1993.1013 ↗
53. 10.1063/1.475272310.1063/1.4752723 ↗