Growth of Large-Size SnS Thin Crystals Driven by Oriented Attachment and Applications to Gas Sensors and Photodetectors
Source abstract
Abstract
Freestanding large-size SnS thin crystals are synthesized via two-dimensional oriented attachment (OA) growth of colloidal quantum dots (CQDs) in a novel high-pressure solvothermal reaction. The SnS thin crystals present a uniform rectangular shape with a lateral size of 20-30 um and thickness of <10 nm. The evolution process demonstrates that a synergetic effect of pressure, aging time and organic ligands results in polycrystal-to-monocrystal formation and defect annihilation. Furthermore, gas sensor and photodetector devices, based on SnS thin single crystals, are also prepared. The sensing devices present high sensitivity, superior selectivity, low detection limit (≪100 ppb) and reversibility to NO2 at room temperature. The fabricated photodetector devices exhibit a high responsivity of 2.04 × 10(3) A W(1-) and high external quantum efficiency of ∼4.75 × 10(5) % at 532 nm, which are much higher than most of the photodetector devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
Funding
National Natural Science Foundation of China · Independent Innovation Foundation, Shandong University · Natural Science Foundation of Shandong Province
References (30)
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