Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor

The ferroelectric field-effect transistor (FeFET), which has nonvolatility, is a key basic element of a logic circuit. In recent years, there has been a growing interest in applying FeFET memory devices in the field of optoelectronics to achieve integrated devices with photon sensing and storage functionalities. However, in the limited development of these compact and versatile optoelectronic memories, the design of an optical absorption layer is still elusive. Wavelength selective optoelectronic memories cannot be realized only using a simple FeFET structure with a 2D channel, especially in the infrared communication band. In this study, we propose a device based on a P(VDF-TrFE)/graphene/SiO 2 /p-Si structure, in which the graphene/SiO 2 /p-Si architecture has strong infrared absorption capacity due to the interfacial gating effect. The photogenerated carriers can modulate the carrier density in graphene, thereby controlling the polarization effect of P(VDF-TrFE) and achieving nonvolatile storage of optical information. We successfully exhibited six resistive states of optical and electrical signal storage using this device. The programming of the optical and electrical signals can be achieved in this single device simultaneously. This dual-mode multistate storage device that combines light and electricity may become a key component in high-capacity and nonvolatile optical communication hardware.