High Luminance and Stability of Perovskite Quantum Dot Light-Emitting Diodes via ZnBr2 Passivation and an Ultrathin Al2O3 Barrier with Improved Carrier Balance and Ion Diffusive Inhibition
Source abstract
Abstract
Carrier balance and ion diffusive inhibition are crucial to the external quantum efficiency (EQE) and stability of perovskite quantum dot light-emitting diodes (PQLEDs). Herein, an inorganic ZnBr2 ligand is used to passivate the Br vacancy on the surface of the perovskite quantum dots and, thus, near-unity photoluminescence quantum yield is achieved. With respect to energy alignment and carrier balance, poly[bis(4-phenyl) (4-butylphenyl) amine] (poly-TPD) is chosen to match with 1,3,5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBi), and the fabricated PQLEDs exhibit the maximum luminance as high as 92,279 cd m–2. In addition, an ultrathin Al2O3 layer is introduced between indium tin oxide (ITO) and poly(ethylene dioxythiophene):polystyrene sulfonate (PEDOT:PSS) via atomic layer deposition (ALD). The Al2O3 buffer layer can precisely control the hole transmission rate, balance the carrier injection, and realize the improvement of EQE from 2.86 to 4.81%. The T50 lifetime of the device is extended by about 30 times due to suppression of metal ion diffusion from ITO to the emission layer. Our work demonstrates the promising fabrication of highly efficient and stable PQLEDs via ALD interface engineering.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Organic Light-Emitting Diodes Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518067, China
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Funding
Natural Science Foundation of Shenzhen City · Huazhong University of Science and Technology · Natural Science Foundation of Hubei Province · National Natural Science Foundation of China · HUST State Key Lab Project
References (60)
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