journal article·2022-01-24Open access

Flexible InGaP/GaAs Tandem Solar Cells Encapsulated with Ultrathin Thermally Grown Silicon Dioxide as a Permanent Water Barrier and an Antireflection Coating

Tae Soo Kim, Hyo Jin Kim, Jae-Hoon Han, Won Jun Choi, Ki Jun Yu

ACS Applied Energy Materials· Volume 5· Issue 1

Abstract

The lifetime and stability of flexible photovoltaic (PV) devices are crucial factors in the production of sustainable and eco-friendly energy. However, flexible PV devices are usually constructed with a thin active material integrated onto a soft substrate, the surfaces of which are prone to moisture and heat damage, making devices unreliable in terms of their lifetime and stability. Here, we built flexible InGaP/GaAs tandem solar cells with an ultrathin thermally grown silicon dioxide layer as a permanent water barrier and an antireflection coating (ARC). By transferring an ultrathin thermally grown silicon dioxide onto flexible InGaP/GaAs tandem solar cells, there was no performance degradation even after soaking the solar cells in water at 70 °C for 10 days. Furthermore, the energy conversion efficiency of the solar cell with a thermally grown silicon dioxide layer was improved by 2.24% due to antirefletion effect compared with that of the solar cells without the silicon dioxide layer. Such device technology establishes a stable energy source not only for vehicles, satellites, and drones exposed to harsh environments but also for underwater operating systems and sensors.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: solar cell performance optimization · Nanowire Synthesis and Applications · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea

Research Center for ICT and Photonics Energy, Korea Photonics Technology Institute, 9, Cheomdan Venture-ro, Buk-gu, Gwangju 61007, Korea

Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Korea

Funding

National Research Foundation of Korea · Korea Institute of Science and Technology

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