journal article·2021-12-27

Toward High-Efficiency Cu(In,Ga)(S,Se)2 Solar Cells by a Simultaneous Selenization and Sulfurization Rapid Thermal Process

Weimin Li, Qiuming Song, Chenchen Zhao, Tongqing Qi, Chen Zhang, Wei Wang, Chuanzeng Gao, Xue Zheng, De Ning, Ming Ma, Jun Zhang, Ye Feng, Ming Chen, Wenjie Li, Chunlei Yang

ACS Applied Energy Materials· Volume 4· Issue 12
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Abstract

The open-circuit voltage (Voc) of copper indium gallium selenium (CIGSe) thin-film solar cells fabricated by a rapid thermal selenization process using elemental Se is limited to 600 mV, posing great challenges to high-efficiency CIGSe solar cells. In this study, we propose an effective method to improve the Voc of chalcopyrite solar cells by a simultaneous rapid thermal selenization and sulfurization process (RTP) using a Se capping layer and diluted H2S gas simultaneously. The high-temperature process time in RTP can be minimized without extra sulfurization time. The Voc of the Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells was improved significantly by optimizing the concentration of the H2S gas and the thickness of the Se capping layer. We have successfully achieved high-efficiency CIGSSe solar cells above 17% by the RTP process using an elemental Se source with the optimized H2S content of 5% and the Se capping layer thickness of 0.85 μm The significance of this work is reducing the duration of the high-temperature process to less than 5 min, without toxic and expensive H2Se, therefore exerting strong attraction for industrial CIGSSe photovoltaic applications.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People’s Republic of China

University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

Industralization Centre of Micro & Nano ICS and Devices, College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China

Department of Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People’s Republic of China

School of Physical Science and Technology, Lingnan Normal University, 29 Cunjin Road, Zhanjiang 524048, People’s Republic of China

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Guangdong Province · Natural Science Foundation of Top Talent, Shenzhen Technology University

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