DataVXACS Applied Energy MaterialsPaper
journal article·2022-04-25

Relationship between Carrier Density and Precursor Solution Stirring for Lead-Free Tin Halide Perovskite Solar Cells Performance

Ajay Kumar Baranwal, Kohei Nishimura, Dong Liu, Muhammad Akmal Kamarudin, Gaurav Kapil, Shrikant Saini, Tomohide Yabuki, Satoshi Iikubo, Takashi Minemoto, Kenji Yoshino, Koji Miyazaki, Qing Shen, Shuzi Hayase

ACS Applied Energy Materials· Volume 5· Issue 4
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Source abstract

Abstract

The oxidation of tin halide perovskite precursor (THP) with the solvent dimethyl sulfoxide (DMSO) has intriguing drawbacks. We found that THP oxidation under progressive stirring can be hindered by the addition of GeI2. Subsequently, the stirring time of the precursor solution affects the carrier density and semiconducting properties of fabricated films, because DMSO can increase the oxidation induced carrier density. On the other hand, dimethylformamide (DMF) can suppress the oxidation induced carrier density. After 24 h, an efficiency of 10.26% is found when DMF is used and 7.12% is found when DMSO is used as a stirring solvent.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan

Faculty of Informatics & Engineering, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan

Department of Mechanical Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka 804-8550, Japan

Graduate School of Life Science & Systems Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka 808-0196, Japan

Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

Department of Electrical and Electronic Engineering, Miyazaki University, Miyazaki 889-2192, Japan

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