Dimension- and Surface-Tailored ZnO Nanowires Enhance Charge Collection in Quantum Dot Photovoltaic Devices

The use of zinc oxide (ZnO) nanowires improves charge collection, and consequently power conversion efficiency, in quantum dot (QD) based photovoltaic devices. However, the role of the nanowire geometry (e.g., density, length, and morphology, etc.) relative to the QD properties remains unexplored, in part due to challenges with controlled nanowire synthesis. Here, we independently tailor nanowire length and the active device layer thickness to study charge collection in lead sulfide (PbS) QD photovoltaic devices. We then demonstrate consistently high internal quantum efficiency in these devices by applying quantum efficiency and total reflectance measurements. Our results show that significant losses originate from ZnO nanowire–QD interfacial recombination, which we then successfully overcome by using nanowire surface passivation. This geometry-tailored approach is generally applicable to other nanowire–QD systems, and the surface passivation schemes will play a significant role in future development of nanostructured photovoltaics.