Thermoelectric p-Type Ag9GaTe6 with an Intrinsically Low Lattice Thermal Conductivity
Source abstract
Abstract
Ag-based argyrodites with a general formula of Ag(12–n)Bn+X6 (B = Ga/Al/Si/Ge/Sn and X = S/Se/Te) have recently attracted much attention as promising thermoelectrics because of their ultralow lattice thermal conductivity and richness in the composition. Most of these Ag-based argyrodites are n-type conduction semiconductors and show a promising thermoelectric figure of merit (zT). However, p-type argyrodites have been much less reported, and this motivates the current work to focus on a novel p-type argyrodite Ag9GaTe6 for thermoelectric applications. Although various doping (Cd, Zn, Mg, Nb, Se, and Cu) were found to insufficiently increase the hole concentration for a degenerate conduction, a peak zT of 0.65 at 600 K can still be realized in p-type Ag9Ga0.95Cd0.05Te6. This largely relies on a lattice thermal conductivity of only ∼0.2 W/m-K (nearly independent with temperature and doping), which results from the low sound velocity, strong lattice anharmonicity, and complex crystal structure. This work demonstrates the potential of Ag9GaTe6 as a promising p-type thermoelectric material, particularly with a further increase in hole concentration.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China
Funding
China Postdoctoral Science Foundation · National Natural Science Foundation of China · Fundamental Research Funds for Science and Technology Innovation Plan of Shanghai
References (75)
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