Electronic Properties and Defect Investigation of MASnX3 (X = Cl, Br, and I) Perovskite Structures
Source abstract
Abstract
Tin-based organic–inorganic halide perovskites have emerged as promising lead-free candidates for photovoltaic applications due to their favorable optoelectronic properties. However, their practical deployment is limited by intrinsic instability arising from the native defect formation. In this work, we systematically investigate the defect chemistry of MASnX 3 (MA = CH 3 NH 3 +; X = I, Br, Cl) using a combination of density functional theory (DFT) calculations and experimental analysis. Formation energy calculations identify Sn vacancies and halide interstitials as the most thermodynamically favorable defects. Among the series, MASnCl 3 exhibits the highest structural stability, attributed to its reduced tendency to form Sn vacancies. Furthermore, Cl doping in MASnI 3 is shown to increase the formation energy of Sn vacancies, thereby mitigating defect-induced degradation. These findings offer critical insights into the defect tolerance of tin halide perovskites and highlight effective strategies for enhancing their stability and performance in solar cell applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Electronic and Structural Properties of Oxides · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Interdisciplinary Engineering Sciences, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Graduate School of Life Science and Systems Engineering
Kyushu Institute of Technology
Funding
JST-Mirai Program · New Energy and Industrial Technology Development Organization · Kyushu University · Japan Society for the Promotion of Science
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