CuBiS₂ Ternary Quantum Dots: Tuning the Deposition Technique for Enhanced Photovoltaic Performance

This research focuses on the generation of cleaner and more affordable energy using CuBiS 2 photoabsorbers in solar cells. One major obstacle impeding advancement of cell efficiency is the low quantum dot (QD) loading volume. The degree of QDs loaded onto the surfaces of the TiO 2 has an impact on the device’s capacity to capture light and the interfacial charge recombination, and it controls the performance of QD solar cells. The cells are made using the SILAR process, making the device protocol extremely feasible, practically robust, and reliable. A detailed investigation on material characteristics as well as deposition methods paved the way for the highest PCE (power conversion efficiency) obtained for CuBiS 2 QDs so far. The importance of Cu compounds (CuBiS 2 ) in tuning the PCE is also demonstrated. Moreover, a series of inexpensive inorganic and solid-state hole transport materials are investigated to address the issues with liquid electrolyte in these devices. Charge carrier dynamics across the interface between the photoabsorber and the hole transport layer are studied in detail using electron impedance spectroscopy. An investigation on the relationships between processing, structure, properties, and performances allowed a precise analysis of the device.