Studies on Femtosecond Laser Textured Broadband Anti-reflective Hierarchical a-SiNx:H Thin Films for Photovoltaic Applications

Simple ultrafast laser writing for the fabrication of hierarchical silicon nitride (a-SiN x:H) microstructures is demonstrated as an effective antireflection coating. A wide range of Si-rich to N-rich a-SiN x:H thin films, having varied optical band gap (2.32–5.94 eV) and refractive index (2.8–1.7) of wavelength-ordered (∼λ/4) thickness, are deposited using the plasma-enhanced chemical vapor deposition technique. The high-intensity femtosecond laser (800 nm, 120 fs, 1 kHz) interaction with a-SiN x:H films resulted in diverse nano-/microstructures with systematic width and depth born out of nonlinear light–matter interactions. These experimentally demonstrated the extremely disordered micro–nano structures over a large area of ∼ 1 cm 2 that exhibit significant light trapping and absorption capabilities over a broad spectral region of 200–1000 nm. The extensive reduction of reflection losses from 30 to 2.8% from pre- to post-laser texturing is a favorable condition for broadband anti-reflective coatings for enhanced light harvesting from prefabricated photovoltaic devices.