journal article·2024-10-14Open access

Influence of Sodium Concentration on the Optoelectronic Properties of Silicon Clathrate Films

Anil Kumar Bharwal, Romain Vollondat, Charif Tamin, Stéphane Roques, Jérémy Bartringer, Daniel Stoeffler, Céline Chevalier, Aziz Dinia, Abdelilah Slaoui, Thomas Fix

ACS Applied Energy Materials· Volume 7· Issue 19

Abstract

Due to their original optoelectronic properties and cage-like structure, type-II silicon clathrate (Na x Si 136 ) films are investigated as a new silicon-based material for energy applications. In view of the devices and applications, understanding the energy levels of these clathrates is crucial and needs to be investigated as they vary strongly with Na concentration. In this study, we determined the optical bandgap energy, work function, ionization energy, and surface photovoltage for a wide range of compositions ranging from Na 0.1 Si 136 to Na 23 Si 136 . Our findings reveal that the semiconducting properties and potential as solar cell absorbers are dramatically dependent on the Na concentration, with nearly Na-free cages showing the most promise for device applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Semiconductor materials and interfaces · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

ICube Laboratory, University of Strasbourg and CNRS, Strasbourg 67037, France

CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, Villeurbanne 69100, France

IPCMS Laboratory, University of Strasbourg and CNRS, Strasbourg 67037, France

Funding

Agence Nationale de la Recherche

References (60)

Show source-provided references
1. 10.1126/science.150.3704.171310.1126/science.150.3704.1713 ↗
2. 10.1002/pssc.20130039710.1002/pssc.201300397 ↗
3. 10.1016/j.tsf.2016.03.05610.1016/j.tsf.2016.03.056 ↗
4. 10.1103/PhysRevLett.108.15550110.1103/PhysRevLett.108.155501 ↗
5. 10.1038/nmat414010.1038/nmat4140 ↗
6. 10.1063/5.006272310.1063/5.0062723 ↗
7. 10.1002/aesr.20200011410.1002/aesr.202000114 ↗
8. 10.1063/5.014382810.1063/5.0143828 ↗
9. 10.1103/PhysRevB.64.15320110.1103/PhysRevB.64.153201 ↗
10. 10.1021/ic202199t10.1021/ic202199t ↗
11. 10.1039/D4RA02112F10.1039/D4RA02112F ↗
12. 10.1021/acs.jpcc.1c0402010.1021/acs.jpcc.1c04020 ↗
13. 10.1021/acs.inorgchem.2c0370310.1021/acs.inorgchem.2c03703 ↗
14. 10.1063/1.307815710.1063/1.3078157 ↗
15. 10.1063/1.500044410.1063/1.5000444 ↗
16. 10.1016/j.optmat.2020.11004310.1016/j.optmat.2020.110043 ↗
17. 10.1021/acs.jpcc.0c0271210.1021/acs.jpcc.0c02712 ↗
18. 10.1103/PhysRevB.62.R770710.1103/PhysRevB.62.R7707 ↗
19. 10.1016/j.jallcom.2022.16396710.1016/j.jallcom.2022.163967 ↗
20. 10.1103/PhysRevB.62.713810.1103/PhysRevB.62.7138 ↗
21. 10.3390/ma1702050410.3390/ma17020504 ↗
22. 10.1016/j.jallcom.2013.05.17610.1016/j.jallcom.2013.05.176 ↗
23. 10.1002/adma.20210675410.1002/adma.202106754 ↗
24. 10.1039/C3CE42626B10.1039/C3CE42626B ↗
25. 10.1016/j.solidstatesciences.2004.02.00610.1016/j.solidstatesciences.2004.02.006 ↗
26. 10.1021/ja903362b10.1021/ja903362b ↗
27. 10.1021/cm103135k10.1021/cm103135k ↗
28. 10.1021/ja502733e10.1021/ja502733e ↗
29. 10.1021/acs.cgd.7b0134210.1021/acs.cgd.7b01342 ↗
30. 10.3390/cryst1107080810.3390/cryst11070808 ↗
31. 10.1007/s10853-012-6886-010.1007/s10853-012-6886-0 ↗
32. 10.1002/pip.467003030310.1002/pip.4670030303 ↗
33. 10.1021/acsami.0c2097610.1021/acsami.0c20976 ↗
34. 10.1038/s41467-023-37234-010.1038/s41467-023-37234-0 ↗
35. 10.1039/d3ee02571c10.1039/d3ee02571c ↗
36. 10.1039/C6CP02446G10.1039/C6CP02446G ↗
37. 10.1002/pssc.20140008610.1002/pssc.201400086 ↗
38. 10.1002/admi.20180205810.1002/admi.201802058 ↗
39. 10.1002/aenm.20190325210.1002/aenm.201903252 ↗
40. 10.1021/acsenergylett.1c0257710.1021/acsenergylett.1c02577 ↗
41. 10.3390/nano1403030010.3390/nano14030300 ↗
42. 10.1021/ic202199t10.1021/ic202199t ↗
43. 10.1016/j.ssc.2021.11449210.1016/j.ssc.2021.114492 ↗
44. 10.1103/PhysRevB.56.1389810.1103/PhysRevB.56.13898 ↗
45. 10.1103/PhysRevB.57.R947510.1103/PhysRevB.57.R9475 ↗
46. 10.1063/1.152314610.1063/1.1523146 ↗
47. 10.1103/PhysRevB.60.95010.1103/PhysRevB.60.950 ↗
48. 10.1103/PhysRevB.50.1700110.1103/PhysRevB.50.17001 ↗
49. 10.1103/PhysRevB.101.24520410.1103/PhysRevB.101.245204 ↗
50. 10.1016/0022-4596(73)90221-110.1016/0022-4596(73)90221-1 ↗
51. 10.1063/5.006272310.1063/5.0062723 ↗
52. 10.1117/12.204005610.1117/12.2040056 ↗
53. 10.1039/C5MH00160A10.1039/C5MH00160A ↗
54. 10.1016/j.physb.2006.03.07010.1016/j.physb.2006.03.070 ↗
55. 10.1063/1.11029210.1063/1.110292 ↗
56. 10.1039/D4SE00416G10.1039/D4SE00416G ↗
57. 10.1103/PhysRevLett.104.01830110.1103/PhysRevLett.104.018301 ↗
58. 10.1016/j.jpcs.2013.12.00910.1016/j.jpcs.2013.12.009 ↗
59. 10.1088/1674-1056/24/10/10710110.1088/1674-1056/24/10/107101 ↗
60. 10.1063/1.165030310.1063/1.1650303 ↗