journal article·2023-06-26

Enhanced Open-Circuit Voltage and Improved Stability with 3-Guanidinoproponic Acid as the Passivation Agent in Blade-Coated Inverted Perovskite Solar Cells

Mazhar Abbas, Muhammad Rauf, Boyuan Cai, Fei Guo, Xiao-Cong Yuan, Tanka Raj Rana, J. Devin Mackenzie, Aung Ko Ko Kyaw

ACS Applied Energy Materials· Volume 6· Issue 12
Publisher page

Abstract

The formation of high-density charge trap states along the surface and grain boundaries of the perovskite absorber is a major cause of recombination that limits the efficiency and quickly degrades the long-term stability of perovskite solar cells (PSCs). To improve the PSC performance, we investigated the use of amino acids with Lewis acid–base functional groups, namely, 2-guanidinoacetic acid, l -aspartic acid, l -glutamic acid, and 3-guanidinoproponaic acid (3gpa), as passivating dopants for blade-coated perovskite films. The best photovoltaic performance was achieved with 4 mol% 3gpa doping, which effectively passivated both positively and negatively charged defects, resulting in a 12.9% improvement in the open-circuit voltage and a high PCE of 19.83%. Additionally, the improved carrier lifetime and reduced defect density led to improved long-term stability in blade-coated PSCs.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, China

Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen 518060, China

Washington Clean Energy Testbeds, Department of Materials Science and Engineering and Mechanical Engineering, University of Washington, Seattle, Washington 98195, United States

College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen 518060, China

Institute of Photonic Chips, the University of Shanghai for Science and Technology, Shanghai 200093, China

Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou 510632, China

Funding

Science, Technology and Innovation Commission of Shenzhen Municipality · National Natural Science Foundation of China

References (48)

Show source-provided references
1. 10.1016/j.orgel.2021.10607710.1016/j.orgel.2021.106077 ↗
2. 10.1021/acsami.1c1133510.1021/acsami.1c11335 ↗
3. 10.1038/natrevmats.2018.1710.1038/natrevmats.2018.17 ↗
4. 10.1002/pip.359510.1002/pip.3595 ↗
5. 10.1016/j.joule.2021.04.00810.1016/j.joule.2021.04.008 ↗
6. 10.1039/D2TC02592B10.1039/D2TC02592B ↗
7. 10.1016/j.jechem.2022.12.02910.1016/j.jechem.2022.12.029 ↗
8. 10.3390/ma1321485110.3390/ma13214851 ↗
9. 10.1039/D1EE01778K10.1039/D1EE01778K ↗
10. 10.1039/C9CS00711C10.1039/C9CS00711C ↗
11. 10.1016/j.joule.2020.10.01410.1016/j.joule.2020.10.014 ↗
12. 10.1002/aesr.20200008810.1002/aesr.202000088 ↗
13. 10.7567/JJAP.54.08KF0410.7567/JJAP.54.08KF04 ↗
14. 10.1038/s41566-019-0398-210.1038/s41566-019-0398-2 ↗
15. 10.1002/aenm.20190163110.1002/aenm.201901631 ↗
16. 10.1016/j.jpowsour.2019.04.05610.1016/j.jpowsour.2019.04.056 ↗
17. 10.1002/solr.20180003410.1002/solr.201800034 ↗
18. 10.1002/smll.20200560810.1002/smll.202005608 ↗
19. 10.1039/D0SE00528B10.1039/D0SE00528B ↗
20. 10.1021/acsami.1c0460110.1021/acsami.1c04601 ↗
21. 10.1021/acsami.0c0882710.1021/acsami.0c08827 ↗
22. 10.1016/j.cej.2022.13510710.1016/j.cej.2022.135107 ↗
23. 10.1002/solr.20190002910.1002/solr.201900029 ↗
24. 10.1016/j.jallcom.2021.16014010.1016/j.jallcom.2021.160140 ↗
25. 10.1016/j.nanoen.2019.02.06410.1016/j.nanoen.2019.02.064 ↗
26. 10.1039/D0TA12342K10.1039/D0TA12342K ↗
27. 10.1039/D0TC04186F10.1039/D0TC04186F ↗
28. 10.1002/ente.20170037410.1002/ente.201700374 ↗
29. 10.1038/s41566-021-00829-410.1038/s41566-021-00829-4 ↗
30. 10.1039/C8CS00853A10.1039/C8CS00853A ↗
31. 10.1002/aenm.20170062310.1002/aenm.201700623 ↗
32. 10.1002/aenm.20140081210.1002/aenm.201400812 ↗
33. 10.1038/srep0607110.1038/srep06071 ↗
34. 10.1002/anie.20190601710.1002/anie.201906017 ↗
35. 10.1063/1.233813210.1063/1.2338132 ↗
36. 10.1002/adfm.20220888510.1002/adfm.202208885 ↗
37. 10.1007/s42114-021-00238-910.1007/s42114-021-00238-9 ↗
38. 10.1002/anie.20191542210.1002/anie.201915422 ↗
39. 10.1021/acsomega.8b0106110.1021/acsomega.8b01061 ↗
40. 10.1002/adfm.20200942510.1002/adfm.202009425 ↗
41. 10.1126/sciadv.abg063310.1126/sciadv.abg0633 ↗
42. 10.1002/adfm.20160490610.1002/adfm.201604906 ↗
43. 10.1016/j.nanoen.2019.10432010.1016/j.nanoen.2019.104320 ↗
44. 10.1002/aenm.20190400110.1002/aenm.201904001 ↗
45. 10.1038/s41467-021-21803-210.1038/s41467-021-21803-2 ↗
46. 10.1039/D0TC05056C10.1039/D0TC05056C ↗
47. 10.1016/j.mssp.2021.10566610.1016/j.mssp.2021.105666 ↗
48. 10.1002/adma.20190118310.1002/adma.201901183 ↗