journal article·2022-05-23

Improved Thermoelectric–Photovoltaic Performance of Ag2Se Originating from a Halogenation-Induced Wider Band Gap and Low Crystal Symmetry

Yee Hui Robin Chang, Junke Jiang, Keat Hoe Yeoh, Heng Yen Khong, Mohd Muzamir Mahat, Soo See Chai, Ismail Saad, Moi Hua Tuh

ACS Applied Energy Materials· Volume 5· Issue 5
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Abstract

Ag2Se has drawn widespread attention in wearable self-powered technologies because of its ductile nature, chemical stability, and low toxicity. However, its stable orthorhombic bulk phase is a narrow band gap material with compromised Seebeck coefficient. In this work, motivated by the discovery of stretchable Ag2Se and various studies demonstrating the positive role of halogenation toward semiconductor performance, synergistical enhancement of its Seebeck coefficient and quality factor integrating the weighted mobility and lattice thermal conductivity have been achieved by halogenation. Prediction of energy landscape within Ag2Se–X2 (X = F, Cl, and Br) was calculated through global evolutionary algorithm in combination with first-principles approach. Three low-lying energy moieties, Ag2SeBr4, Ag2SeCl6, and Ag2SeF6, and their 2D counterparts with P1 symmetry are deformable inorganic semiconductors exhibiting sufficient electronic, thermal, mechanical and lattice stabilities. Ultimately, their combined low-lying dispersive phonon modes resulting from low crystal symmetry and flattened conduction band due to increased band gap drastically improve the Seebeck coefficient, reduce the band energy offset, and maintain the high phonon scattering rate, in turn leading to an ultralow thermal conductivity (<0.50 W m–1 K–1 at 300 K), enhanced bipolar conduction suppression, and large increase in electronic quality factor, without relinquishing the ductility. As a result, at ∼9 × 1019 cm–3 optimal carrier concentration, a broad plateaued figure of merit ∼1.1 starting from 400 K is obtained for p-doped Ag2SeBr4 and Ag2SeCl6 bulk materials, which corresponds to a 5-fold increase compared to Ag2Se and extends better thermoelectric behavior for Ag2Se over a wider temperature plateau. These structures display broader and steeper absorption coefficient α(ω) ∼ 105 cm–1 in contrast to Ag2Se, encompassing the visible to ultraviolet regions. in particular, all samples have spectroscopic limited maximum efficiency (SLME) above 20% at a scalable thickness of ≥1.0 μm. This work also shows that other interactions, namely Ag2Se–AgX and Ag2Se–X mixtures, are incorrect synthesis approaches.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Faculty of Applied Sciences, Universiti Teknologi MARA, Cawangan Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia

Materials Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, 5612 Eindhoven, The Netherlands

Center for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, 5612 Eindhoven, The Netherlands

Department of Electrical and Electronic Engineering, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, 43000 Kajang, Selangor, Malaysia

Center for Photonics and Advanced Material Research, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, 43000 Kajang, Selangor Malaysia

Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor Darul Ehsan, Malaysia

Faculty of Computer Science & Information Technology (FCSIT), Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia

Faculty of Engineering, Universiti Malaysia Sabah, Jalan UMS, 88400 Kota Kinabalu, Sabah, Malaysia

Faculty of Computer & Mathematical Sciences, Universiti Teknologi MARA, Cawangan Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia

Funding

SDG@Borneo

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