Enhancing the Efficiency of GaSb Photovoltaic Cell Using Thin-Film Multiscale Haze and Radiative Cooling
Source abstract
Abstract
In this work, a multiscale thin-film membrane of self-aggregated anodized aluminum oxide (AAO) nanowire structure was developed to enhance the efficiency of GaSb photovoltaic (PV) cell using both optical haze and passive radiative-cooling effects in a broad region of the solar spectrum. We controlled, (1) the optical properties of thin-film AAO and (2) the plasmonic-induced perfect absorption/emission by changing packing densities and lengths of AAO nanowires during the anodization and wet etching processes. The AAO nanowire structures provide 98% absorption/emission in the environmental emission/transmission window (8–13 μm), resulting in efficient passive self-cooling and higher-order optical haze transmission up to approximately 98%; privileged characteristics enhance the suppressed PV efficiency due to the unwanted reflection of incident light and excessive heating effects caused by low- and high-energy photons unused by the band gap of the cell. By integrating this thin-film nanowire structure membrane with the front surface of the GaSb cell, we achieved an overall increase in efficiency of 18% in contrast with a bare cell.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thermal Radiation and Cooling Technologies · solar cell performance optimization · Optical properties and cooling technologies in crystalline materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
NanoSYD, Mads Clausen Institute, University of Southern Denmark, Alsion 2, 6400 Sønderborg, Denmark
Nanophotonics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
Funding
Yonsei University
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