journal article·2021-10-25

Solution Processing Cu3BiS3 Absorber Layers with a Thiol–Amine Solvent Mixture

Kristopher M. Koskela, Abegail C. Tadle, Keying Chen, Richard L. Brutchey

ACS Applied Energy Materials· Volume 4· Issue 10
Publisher page

Abstract

There is a need to develop more Earth-abundant, less toxic, and more environmentally stable solar absorbers as the market demand for solar cells increases. Wittichenite (Cu3BiS3) is a sulfosalt mineral that belongs to the Cu3MCh3 (M = Sb, Bi; Ch = S, Se) family of materials. Cu3BiS3 contains bismuth, a nontoxic heavy metal that has a 6s2 electronic structure akin to halide perovskites that have demonstrated excellent properties, and the sulfosalt crystallizes in the P212121 space group with a near-optimal band gap for single-junction thin film solar cells. We report the utility of thiol–amine solvent mixtures to dissolve inexpensive bulk CuO and Bi2S3 precursors to produce a free-flowing semiconductor ink. Good quality and phase-pure Cu3BiS3 thin films were solution processed from this ink upon mild annealing. The p-type thin films possess a direct band gap of 1.47 eV with a high absorption coefficient through the visible (∼105 cm–1), carrier mobilities in the range of 0.4–90 cm2 (V·s)−1, and a strong photoelectrochemical current response. The optoelectronic properties of Cu3BiS3 thin films deposited using this thiol–amine chemistry suggest that it is a favorable candidate as a solution-processable solar absorber.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States

Funding

Division of Materials Research

References (55)

Show source-provided references
1. 10.1126/science.aad442410.1126/science.aad4424 ↗
2. 10.1002/(SICI)1099-159X(199911/12)7:6<489::AID-PIP287>3.0.CO;2-N10.1002/(SICI)1099-159X(199911/12)7:6<489::AID-PIP287>3.0.CO;2-N ↗
3. 10.1016/j.solener.2010.12.00210.1016/j.solener.2010.12.002 ↗
4. 10.1039/C6CC06475B10.1039/C6CC06475B ↗
5. 10.1039/C4TA01198H10.1039/C4TA01198H ↗
6. 10.1103/PhysRevApplied.7.02401510.1103/PhysRevApplied.7.024015 ↗
7. 10.1002/aenm.20140049610.1002/aenm.201400496 ↗
8. 10.1016/j.solmat.2016.02.01310.1016/j.solmat.2016.02.013 ↗
9. 10.1002/adfm.20130423810.1002/adfm.201304238 ↗
10. Sugaki A. · Technol. Rep. Yamaguchi Univ. · 1972 · 1 · 71
11. 10.1021/acsami.9b0426810.1021/acsami.9b04268 ↗
12. 10.1107/S056774087300695310.1107/S0567740873006953 ↗
13. 10.1063/1.479275110.1063/1.4792751 ↗
14. 10.1038/nchem.60910.1038/nchem.609 ↗
15. Mineral Commodity Summaries 2016; U.S. Geological Survey, U.S. Government Printing Office: Washington, DC, 2016; pp 36–81.
16. Lokanc, M.; Eggert, R.; Redlinger, M. The Availability of Indium: The Present, Medium Term, and Long Term. National Renewable Energy Laboratory Report; U.S. Department of Energy: Golden, CO, 2015.10.2172/1327212 ↗
17. 10.3390/su1314788110.3390/su13147881 ↗
18. 10.1021/cm061452z10.1021/cm061452z ↗
19. 10.1021/cm061453r10.1021/cm061453r ↗
20. 10.1063/1.333472810.1063/1.3334728 ↗
21. 10.1039/b403482a10.1039/b403482a ↗
22. 10.1016/j.tsf.2015.04.02510.1016/j.tsf.2015.04.025 ↗
23. 10.1039/C7TC05711C10.1039/C7TC05711C ↗
24. 10.1016/j.tsf.2012.04.00310.1016/j.tsf.2012.04.003 ↗
25. 10.1039/C7TA02740K10.1039/C7TA02740K ↗
26. 10.1007/s11664-017-5642-210.1007/s11664-017-5642-2 ↗
27. 10.1007/s10854-017-7002-710.1007/s10854-017-7002-7 ↗
28. 10.1088/2053-1591/ab283f10.1088/2053-1591/ab283f ↗
29. 10.1016/j.solmat.2017.09.05010.1016/j.solmat.2017.09.050 ↗
30. 10.1007/s41204-017-0025-810.1007/s41204-017-0025-8 ↗
31. 10.1021/ja408433610.1021/ja4084336 ↗
32. 10.1021/cm503124u10.1021/cm503124u ↗
33. 10.1002/anie.20150335310.1002/anie.201503353 ↗
34. 10.1039/C6TC02117D10.1039/C6TC02117D ↗
35. 10.1021/acs.chemmater.7b0393110.1021/acs.chemmater.7b03931 ↗
36. 10.1039/C7CC02226C10.1039/C7CC02226C ↗
37. 10.1021/jacs.9b1378710.1021/jacs.9b13787 ↗
38. 10.1039/C6TA00533K10.1039/C6TA00533K ↗
39. 10.1021/acsami.6b0154110.1021/acsami.6b01541 ↗
40. 10.1039/C8TA12089G10.1039/C8TA12089G ↗
41. 10.1016/j.tsf.2014.04.05710.1016/j.tsf.2014.04.057 ↗
42. 10.1039/c3nr33268c10.1039/c3nr33268c ↗
43. 10.1016/j.matlet.2011.11.09810.1016/j.matlet.2011.11.098 ↗
44. 10.1016/j.ijleo.2016.04.01910.1016/j.ijleo.2016.04.019 ↗
45. 10.1186/1556-276X-9-51310.1186/1556-276X-9-513 ↗
46. 10.1039/c3tc31684j10.1039/c3tc31684j ↗
47. 10.1039/C7TA08078F10.1039/C7TA08078F ↗
48. 10.1016/j.mssp.2018.07.00810.1016/j.mssp.2018.07.008 ↗
49. 10.1063/1.487549510.1063/1.4875495 ↗
50. 10.1088/0031-8949/23/5A/01310.1088/0031-8949/23/5A/013 ↗
51. 10.1016/j.apsusc.2010.07.08610.1016/j.apsusc.2010.07.086 ↗
52. 10.1016/0301-0104(77)85033-710.1016/0301-0104(77)85033-7 ↗
53. 10.1039/C7TC01678F10.1039/C7TC01678F ↗
54. 10.1088/0031-8949/1/5-6/02010.1088/0031-8949/1/5-6/020 ↗
55. 10.1016/j.optmat.2018.12.04110.1016/j.optmat.2018.12.041 ↗