Defect Passivation and Fermi Level Modification for >10% Evaporated All-Inorganic CsPbBr3 Perovskite Solar Cells
Source abstract
Abstract
Current CsPbBr3 perovskite solar cells still suffer from a high open-circuit voltage (Voc) loss due to the high defect density. Herein, we demonstrate a strategy to passivate defects and induce Fermi level modification through BaI2 doping. The carrier lifetime is significantly extended after adding BaI2. In addition, the Fermi level is changed as Ba2+ enters the crystal lattice, which increases the built-in potential and promotes the transport of carriers. As a result, the optimized thermally evaporated device shows a record Voc of 1.551 V and an improved power conversion efficiency of 10.09% as well as excellent thermal stability.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Solid-state spectroscopy and crystallography · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Lab of Advanced Technologies for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
Wuhan University of Technology Advanced Engineering Technology Research Institute of Zhongshan City, Zhongshan 528403, China
Funding
National Natural Science Foundation of China · Technological Innovation Key Project of Guangdong Province
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