Synthesis of BaZrS₃ Perovskite Thin Films at a Moderate Temperature on Conductive Substrates

Chalcogenide perovskites are being considered for various energy conversion applications, not least photovoltaics. BaZrS3 stands out for its highly stable, earth-abundant, and nontoxic nature. It exhibits a very strong light-matter interaction and an ideal band gap for a top subcell in a two-junction photovoltaic device. So far, thin-film synthesis-necessary for proper optoelectronic characterization as well as device integration-remains underdeveloped. Sputtering has been considered, among others, but the need for an annealing step of at least 900 degrees C has been a cause for concern: such a high temperature could lead to damaging the bottom layers of prospective tandem devices. Still, a solid-state fabrication route has already demonstrated that BaZrS3 can form at much lower temperatures if excess S is present. In this work, sputtered Ba-Zr precursors capped by SnS are sulfurized at under 600 degrees C for 20 min. Although some Sn is still present at the surface after sulfurization, the resulting crystalline quality is comparable to samples synthesized at much higher temperatures. The results are rationalized, and the effect of key process variables is examined. This study represents the first successful synthesis of BaZrS3 perovskite that is compatible with conductive substrates-an important step forward for device integration.