Piperazine Suppresses Self-Doping in CsSnI3 Perovskite Solar Cells
Source abstract
Abstract
Tin-based halide perovskite materials are promising candidates for lead-free halide perovskite solar cells. However, they suffer from poor device reproducibility and limited overall power conversion efficiencies due to their tendency to become semimetallic from p-type defect states. Herein, we demonstrate an effective approach to address this issue via the addition of piperazine to the precursor solution of tin-based halide perovskite films, to suppress the undesirable p-doping of CsSnI3 films. Piperazine is found to significantly reduce the conductivity of CsSnI3 films, improve the film coverage, and at the same time suppress the crystallization of excess SnI2. Consequently, short-circuit behaviors are eliminated, with significantly improved CsSnI3 solar-cell performance. Moreover, the effects of incorporating SnCl2 and SnF2 into the CsSnI3 devices were investigated in conjunction with addition of piperazine to achieve CsSnI3 devices with a maximum power conversion efficiency of 3.83%.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
Mitsubishi Chemical Group Science & Technology Research Center, Inc., 1000 Kamoshida-cho, Aoba-ku, Yokohama 227-8502, Japan
Funding
Basic Energy Sciences · Mitsubishi International Corporation · Institute for Sustainability and Energy at Northwestern
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