Asymmetric Dual-Gate Transistor Based on Dual-Functional h-BN for Memory and Logic Operations

Abstract With the rapid development of data-intensive computation, electronic devices face continuously increasing demands for storage density and computational efficiency, motivating efforts to overcome the performance limitations imposed by the traditional von Neumann architecture and to fundamentally realize memory and logic operations. Leveraging the electronic characteristics of two-dimensional (2D) materials together with the design versatility of van der Waals heterostructures, this study presents an asymmetric dual-gate memory and logic operations device constructed from the 2D insulating material hexagonal boron nitride (h-BN). Distinct from traditional architectures dependent on multimaterial stacking for functional partitioning, this work utilizes the dual physical roles of h-BN under varying electric field regimes: functioning as a tunneling barrier enabling charge injection under high fields, while acting as a robust dielectric medium for field modulation under low fields, thus achieving functional reuse within a single-material platform. Based on this material property, an asymmetric-voltage dual-gate structure was constructed, in which the bottom gate drives the charge program/erase process, while the top gate modulates the channel conductivity, achieving physical decoupling between read and write operations. This structure exhibits strong anti-disturbance capability and stable memory characteristics. The device achieves synergistic operation between nonvolatile memory and logic operations, demonstrating excellent electrical performance and reliability, and providing a new material-driven strategy for the design of multifunctional electronic devices based on 2D materials.