Modulate Optoelectronic Properties of Tin-Doped Gallium Oxide Thin Films for High-Performance Ultraviolet Detection and Imaging
Source abstract
Abstract
Gallium oxide (Ga 2 O 3 ) garners increasing attention in ultraviolet optoelectronic devices and power devices due to its wide bandgap and high chemical stability. Here, we report a synthesis method of tin-doped Ga 2 O 3 films via a solution-based process. The film’s properties can be controlled by the preparation procedure. With an optimized doping concentration, the photodetector shows outstanding comprehensive performance, including a responsivity of 102.5 mA/W and light-to-dark current ratio of 1.54 × 10 3 . We extend this approach to flexible substrates. The obtained films and detectors exhibit exceptional mechanical flexibility. This work provides a strategy of doped-Ga 2 O 3 film into flexible UV optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Semiconductors(Collegeof Integrated Circuits)
Hunan University, Changsha Semiconductor Technology and Application Innovation Research Institute
School of Physics and Electronics
Hunan University
Hunan Liangcheng New Materials Technology Co., Ltd.
Funding
National Key Research and Development Program of China · Key Research and Development Program of Hunan Province of China · Fundamental Research Foundation of National Key laboratory of Automatic Target Recognition
References (31)
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