Dual Effects of Xe Ion Irradiation on Hf 0.5 Zr 0.5 O 2 Capacitors: Ferroelectricity Enhancement and Durability Degradation
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
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Affiliations
School of Integrated Circuits
Huazhong University of Science and Technology
Institute of Modern Physics, Chinese Academy of Sciences (CAS)
School of Nuclear Science and Technology
University of Chinese Academy of Sciences
Wintech-Nano (Suzhou) Co., Ltd.
Institute of Microelectronics, Chinese Academy of Sciences
Funding
National Key Research and Development Program of China · Innovation Center of Radiation Application, China Academy of Engineering Physics