journal article·2026-04-14

Recent Advances on Printed Electronic and Optoelectronic Devices based on 2D Transition Metal Dichalcogenides

Subhankar Debnath, M. Meyyappan, P. K. Giri

Publisher page

Abstract

Direct-write printing has ushered in a paradigm shift in the fabrication of devices, defined by the extreme simplicity of processing compared to micro- and nanofabrication technologies, reduced equipment needs, and overall reduction in cost. A wide range of devices, including transistors, memory, antennas, frequency-selective surfaces, displays, interconnects, chemical and biosensors, energy storage devices, and many others, have been successfully printed on both rigid and flexible substrates. In several applications, printed devices can achieve performance comparable to that of conventionally fabricated counterparts while enabling scalable and substrate-compatible manufacturing. Recognizing the potential of this rapidly emerging technology, the 2D materials community has embraced printing as a viable method for demonstrating various applications of 2D materials. This Spotlight on Applications focuses on printing of key electronic and optoelectronic components, such as transistors, memory devices, photodetectors, and optoelectronic synaptic devices, using 2D transition metal dichalcogenides (TMDs) as active layers. Recent progress in TMD ink development, printing, and postprocessing techniques and advances in printed devices for the above applications are summarized, with an emphasis on current limitations and strategies to improve the state of the art.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics

Indian Institute of Technology Guwahati

Centre for Nanotechnology

Funding

Ministry of Electronics and Information technology · Anusandhan National Research Foundation

References (70)

Show source-provided references
1. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
2. 10.1016/j.mattod.2016.10.00210.1016/j.mattod.2016.10.002 ↗
3. 10.1021/acsanm.5c0508910.1021/acsanm.5c05089 ↗
4. 10.1021/acsmaterialsau.5c0001510.1021/acsmaterialsau.5c00015 ↗
5. 10.1021/acs.chemrev.3c0079110.1021/acs.chemrev.3c00791 ↗
6. 10.1021/accountsmr.3c0003210.1021/accountsmr.3c00032 ↗
7. 10.1002/adfm.20221374410.1002/adfm.202213744 ↗
8. 10.1021/acsomega.1c0063810.1021/acsomega.1c00638 ↗
9. 10.1002/adma.20090114110.1002/adma.200901141 ↗
10. 10.1039/D1MA00463H10.1039/D1MA00463H ↗
11. 10.1088/2058-8585/ace3d810.1088/2058-8585/ace3d8 ↗
12. 10.1039/C4TC01820F10.1039/C4TC01820F ↗
13. 10.1088/2058-8585/aa8ed810.1088/2058-8585/aa8ed8 ↗
14. 10.1109/EDR.2025.356600710.1109/EDR.2025.3566007 ↗
15. 10.1039/C8CS00084K10.1039/C8CS00084K ↗
16. 10.1039/C3CS60217F10.1039/C3CS60217F ↗
17. 10.1038/nnano.2008.21510.1038/nnano.2008.215 ↗
18. 10.1039/C3TC31993H10.1039/C3TC31993H ↗
19. 10.1002/adfm.20140098410.1002/adfm.201400984 ↗
20. 10.1002/admi.20200220510.1002/admi.202002205 ↗
21. 10.1038/nmat394410.1038/nmat3944 ↗
22. 10.1021/cm504486410.1021/cm5044864 ↗
23. 10.1038/s41596-023-00865-010.1038/s41596-023-00865-0 ↗
24. 10.1038/s41699-022-00337-110.1038/s41699-022-00337-1 ↗
25. 10.1002/adma.20210611010.1002/adma.202106110 ↗
26. 10.1021/nn300503e10.1021/nn300503e ↗
27. 10.1038/nnano.2016.28110.1038/nnano.2016.281 ↗
28. 10.1002/smtd.20220115610.1002/smtd.202201156 ↗
29. 10.1002/adma.20220739210.1002/adma.202207392 ↗
30. 10.1039/c3tc31402b10.1039/c3tc31402b ↗
31. 10.1038/s41699-017-0034-210.1038/s41699-017-0034-2 ↗
32. 10.1021/nn501821z10.1021/nn501821z ↗
33. 10.1038/s41598-018-21688-010.1038/s41598-018-21688-0 ↗
34. 10.1039/C9NR02173F10.1039/C9NR02173F ↗
35. 10.1021/acsami.8b1981710.1021/acsami.8b19817 ↗
36. 10.1109/TCT.1971.108333710.1109/TCT.1971.1083337 ↗
37. 10.1038/nature0693210.1038/nature06932 ↗
38. 10.1038/s41467-024-46372-y10.1038/s41467-024-46372-y ↗
39. 10.1021/acsami.4c2308010.1021/acsami.4c23080 ↗
40. 10.1038/s41699-024-00522-410.1038/s41699-024-00522-4 ↗
41. 10.1038/srep3619510.1038/srep36195 ↗
42. 10.1002/aelm.20190074010.1002/aelm.201900740 ↗
43. 10.1039/D3MH01224G10.1039/D3MH01224G ↗
44. 10.1002/inf2.7000010.1002/inf2.70000 ↗
45. 10.1038/s41578-023-00585-710.1038/s41578-023-00585-7 ↗
46. 10.1021/nn301572c10.1021/nn301572c ↗
47. 10.1021/acsnano.5b0794210.1021/acsnano.5b07942 ↗
48. 10.1038/s41467-017-01210-210.1038/s41467-017-01210-2 ↗
49. 10.1038/s41467-020-17297-z10.1038/s41467-020-17297-z ↗
50. 10.1116/6.000008210.1116/6.0000082 ↗
51. 10.1038/s41699-021-00266-510.1038/s41699-021-00266-5 ↗
52. 10.1002/smtd.20210063410.1002/smtd.202100634 ↗
53. 10.1088/1361-6528/abed0510.1088/1361-6528/abed05 ↗
54. 10.1021/acsanm.2c0488510.1021/acsanm.2c04885 ↗
55. 10.1002/smll.20250836010.1002/smll.202508360 ↗
56. 10.1021/acsami.4c0552910.1021/acsami.4c05529 ↗
57. 10.1002/smll.20240266810.1002/smll.202402668 ↗
58. 10.1038/nnano.2013.10010.1038/nnano.2013.100 ↗
59. 10.1088/2058-8585/aaddb510.1088/2058-8585/aaddb5 ↗
60. 10.1088/2053-1583/ab602f10.1088/2053-1583/ab602f ↗
61. 10.1002/adma.20220377210.1002/adma.202203772 ↗
62. 10.1002/adem.20220094610.1002/adem.202200946 ↗
63. 10.1039/D3NR02331A10.1039/D3NR02331A ↗
64. 10.1021/acsami.3c1747710.1021/acsami.3c17477 ↗
65. 10.1002/aisy.20200009910.1002/aisy.202000099 ↗
66. 10.1002/adfm.20230558910.1002/adfm.202305589 ↗
67. 10.1021/acsnano.2c0043910.1021/acsnano.2c00439 ↗
68. 10.1038/s41528-025-00425-410.1038/s41528-025-00425-4 ↗
69. 10.1002/aelm.20240076010.1002/aelm.202400760 ↗
70. 10.1039/D5NR03748D10.1039/D5NR03748D ↗