journal article·2026-04-14

Field-Induced Enhancement of Ferroelectric Switching in Hf 0.5 Zr 0.5 O 2 Capacitors under Cryogenic Conditions

Seungbin Lee, Minjong Lee, Yeseo Choi, Hye Ryeon Park, Jongmug Kang, Hyeonhong Min, Gwanghyeon Jang, Yechan Kim, Dushyant M. Narayan, Ye-Eun Hong, Rino Choi, Min Hwan Lee, Jiyoung Kim, Si Joon Kim

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Abstract

The cryogenic switching behavior of 10 nm Hf 0.5 Zr 0.5 O 2 (HZO) capacitors is investigated down to −180 °C. A significant reduction in remanent polarization (2 P r ) and suppression of the wake-up effect are observed as the measurement temperature is lowered. Systematic field-dependent measurements reveal that increasing the readout and/or wake-up voltage leads to a comparable 2 P r at cryogenic temperatures, indicating that the degradation arises from incomplete field-induced switching rather than intrinsic material instability. These results confirm that ferroelectric performance of HZO persists under cryogenic conditions, as long as sufficient electric fields are applied. The study offers practical insights into the design of cryogenic-compatible ferroelectric memory applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Electronics Engineering, Kangwon National University, Chuncheon, Gangwon-do 24341, Republic of Korea

Department of Electrical and Computer Engineering

The University of Texas at Dallas

Department of Materials Science and Engineering

Inha University

Program in Semiconductor Convergence

Department of Mechanical Engineering

University of California

Funding

National Research Foundation of Korea · Kangwon National University · Korea Institute for Advancement of Technology · Regional Innovation System and Education (RISE)

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