Field-Induced Enhancement of Ferroelectric Switching in Hf 0.5 Zr 0.5 O 2 Capacitors under Cryogenic Conditions
Abstract
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
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Affiliations
Department of Electrical and Electronics Engineering, Kangwon National University, Chuncheon, Gangwon-do 24341, Republic of Korea
Department of Electrical and Computer Engineering
The University of Texas at Dallas
Department of Materials Science and Engineering
Inha University
Program in Semiconductor Convergence
Department of Mechanical Engineering
University of California
Funding
National Research Foundation of Korea · Kangwon National University · Korea Institute for Advancement of Technology · Regional Innovation System and Education (RISE)