Current-Based Statistical Approach toward Quantitative Thickness Analysis of Oxide Thin Films in Semiconductor Devices

Naturally, nanometer-thin films, which are ubiquitous in today’s electronic devices, have an unavoidable leakage current caused by the quantum tunneling effect. However, the control and measurement of the thickness deviations at the subnanometer scale are still under-researched, although this capability will be key to future advances in nanoelectronic mechanics. This study presents a quantitative framework for analyzing thickness variations in oxide thin films based on the mapping of local current measurements and statistical methods. We apply this method to 5 nm-thick SiO 2 and HfO 2 films prepared using different deposition techniques, thereby demonstrating its feasibility and accuracy. Statistical analysis of I – V curve profiles enables distinction between currents associated with defective sites and those arising from intrinsic tunneling. This methodology provides a practical means to evaluate oxide uniformity and electronic reliability in nanoscale devices. It also offers insights relevant to new semiconductor technologies and defect engineering strategies.