Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization
Source abstract
Abstract
Although chalcogenide materials continue to generate considerable interest due to great potentials for various optoelectronic devices, annealing for a long time in oxygen or halide atmospheres is necessary to endow them photo-sensitivity. This paper proposes a universal approach to improve optoelectrical properties for thin film photoresistors (TFPs) by quick-oxygen-sensitizing the doped chalcogenide material PbSnSe with ion implantation. Compared with the as-deposited film, the implanted film exhibits much more uniform image, higher optical absorption, broader optical band gap and better photoelectronic properties. In sensitized PbSnSe TFPs, the PbSnO3 phase formed, which can trap minority carriers, enabling enhanced photoconduction. We also demonstrate the performance of sensitized PbSnSe TFPs with ultraquick and stable photo-response for IR irradiation. The photosensitivity of the sensitized PbSnSe TFPs was about 4.1%, which is about 41.5% higher than that of its as-deposited counterpart. Moreover, the photosensitivity attenuation was restricted by sensitization. The results indicate promising potentials for sensitized chalcogenide platforms, and the developed strategy can be applied for high-performance chalcogenide optoelectronics.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. Herrmann KH, Melzer V (1996) The refractive index enhancement at Eg in narrow-gap semiconductors: Comparison between the interband absorption edge and the oscillator model. Infrared Phys Technol 37:753–761. https://doi.org/10.1016/S1350-4495(96)00005-910.1016/S1350-4495(96)00005-9 ↗
2. Chao IN, McCann PJ, Yuan WL, O'Rear EA, Yuan S (1998) Growth and characterization of IV–VI semiconductor heterostructures on (100) BaF2. Thin Solid Films 323:126–135. https://doi.org/10.1016/S0040-6090(97)01047-X10.1016/S0040-6090(97)01047-X ↗
3. Samoylov AM, Sharov MK, Buchnev SA et al (2002) Crystal structure, carrier concentration and IR-sensitivity of PbTe thin films doped with Ga by two different methods. J Cryst Growth 240:340–346. https://doi.org/10.1016/S0022-0248(02)00912-010.1016/S0022-0248(02)00912-0 ↗
4. Zogg H, Arnold M (2007) Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors. Infrared Phys Technol 49:183–186. https://doi.org/10.1016/j.infrared.2006.06.00110.1016/j.infrared.2006.06.001 ↗
5. Jasieniak J, Califano M, Watkins SE (2011) Size-dependent valence and conduction band-edge energies of semiconductor nanocrystals. ACS Nano 5:5888–5902. https://doi.org/10.1021/nn201681s10.1021/nn201681s ↗
6. Feng W, Zhou H, Chen F (2015) Impact of thickness on crystal structure and optical properties for thermally evaporated PbSe thin films. Vacuum 114:82–85. https://doi.org/10.1016/j.vacuum.2015.01.00710.1016/j.vacuum.2015.01.007 ↗
7. Wise FW (2000) Lead salt quantum dots: the limit of strong quantum confinement. Acc Chem Res 33:773–780. https://doi.org/10.1021/ar970220q10.1021/ar970220q ↗
8. Mahdy MA, Mahdy IA, Mahmoud EA (2014) Structural and optical properties of PbSe nanostructure thin fi lms prepared by inert gas condensation. Phys E Low-Dimensional Syst Nanostructures 59:117–123. https://doi.org/10.1016/j.physe.2014.01.00910.1016/j.physe.2014.01.009 ↗
9. Zhang Z, Liu C, Zhao X (2015) Utilizing Sn precursor to promote the nucleation of pbse quantum dots with in situ halide passivation. J Phys Chem C 119:5626–5632. https://doi.org/10.1021/jp512717x10.1021/jp512717x ↗
10. Al-ghamdi AA, Al-heniti S, Khan SA (2013) Structural, optical and electrical characterization of Ag doped lead chalcogenide ( PbSe ) thin films. J Lumin 135:295–300. https://doi.org/10.1016/j.jlumin.2012.09.02710.1016/j.jlumin.2012.09.027 ↗
11. Khan SA, Khan ZH, El-sebaii AA et al (2010) Structural, optical and electrical properties of cadmium-doped lead chalcogenide ( PbSe ) thin films. Phys B Phys Condens Matter 405:3384–3390. https://doi.org/10.1016/j.physb.2010.05.00910.1016/j.physb.2010.05.009 ↗
12. Khanlary MR, Salavati E (2012) Optical properties and characterization of prepared Sn-Doped PbSe thin film. Adv Condens Matter Phys. 587403. https://doi.org/10.1155/2012/58740310.1155/2012/587403 ↗
13. Preier H (1979) Recent advances in lead-chalcogenide diode lasers. Appl Phys 20:189–206. https://doi.org/10.1007/BF0088601810.1007/BF00886018 ↗
14. Dimmock JO, Melngailis I, Strauss AJ (1966) Band structure and laser action in PbxSn1-xTe. Phys Rev Lett 16:1193–1196. https://doi.org/10.1103/PhysRevLett.16.119310.1103/PhysRevLett.16.1193 ↗
15. Schaller RD, Klimov VI (2004) High efficiency carrier multiplication in PbSe nanocrystals: Implications for solar energy conversion. Phys Rev Lett 92:1–4. https://doi.org/10.1103/PhysRevLett.92.18660110.1103/PhysRevLett.92.186601 ↗
16. Sun X, Gao K, Pang X, Yang H (2016) Interface and strain energy revolution texture map to predict structure and optical properties of sputtered PbSe thin films. ACS Appl Mater Interfaces. https://doi.org/10.1021/acsami.5b0972410.1021/acsami.5b09724 ↗
17. Song J, Feng W, Ren Y et al (2018) Columnar Te-doped-PbSe thin films on glass for infrared photoelectric detection. Vacuum 155:1–6. https://doi.org/10.1016/j.vacuum.2018.05.04410.1016/j.vacuum.2018.05.044 ↗
18. Qiu J, Weng B, Yuan Z, Shi Z (2013) Study of sensitization process on mid-infrared uncooled PbSe photoconductive detectors leads to high detectivity. J Appl Phys. 103102. https://doi.org/10.1063/1.479449210.1063/1.4794492 ↗
19. Das Kanungo P, Koegler R, Zakharov N et al (2011) Characterization of structural changes associated with doping silicon nanowires by ion implantation. Cryst Growth Des 11:2690–2694. https://doi.org/10.1021/cg200108u10.1021/cg200108u ↗
20. Zhao F, Mukherjee S, Ma J et al (2008) Influence of oxygen passivation on optical properties of PbSe thin films. Appl Phys Lett 92:2012–2015. https://doi.org/10.1063/1.293841710.1063/1.2938417 ↗
21. Zhao L, Qiu J, Weng B et al (2014) Understanding sensitization behavior of lead selenide photoconductive detectors by charge separation model. J Appl Phys. 084502. https://doi.org/10.1063/1.486703810.1063/1.4867038 ↗
22. Yang H, Li X, Mei T, Zheng J (2017) Deep inherent sensitization of lead selenide material via an effective oxygen ion preparation method. Mater Lett 194:142–144. https://doi.org/10.1016/j.matlet.2017.02.02710.1016/j.matlet.2017.02.027 ↗
23. Yang H, Li X, Mei T, Zheng J (2017) The lead selenide photoconductive sensitization via oxygen ion implantation with enhanced optical absorption and carrier mobility. J Mater Sci 52:10779–10786. https://doi.org/10.1007/s10853-017-1255-710.1007/s10853-017-1255-7 ↗
24. Li WQ, Xiao XH, Stepanov AL et al (2013) The ion implantation-induced properties of one-dimensional nanomaterials. Nanoscale Res Lett 8:1–13. https://doi.org/10.1186/1556-276X-8-17510.1186/1556-276X-8-175 ↗
25. Das KP, Kögler R, Nguyen-Duc K et al (2009) Ex situ n and p doping of vertical epitaxialshort silicon nanowires by ionimplantation. Nanotechnology 20:165706. https://doi.org/10.1088/0957-4484/20/16/16570610.1088/0957-4484/20/16/165706 ↗
26. Stichtenoth D, Wegener K, Gutsche C et al (2008) P -type doping of GaAs nanowires. Appl Phys Lett 92:98–101. https://doi.org/10.1063/1.291212910.1063/1.2912129 ↗
27. Jian WB, Wu ZY, Huang RT et al (2006) Direct observation of structure effect on ferromagnetism in Zn1-xCoxO nanowires. Phys Rev B - Condens Matter Mater Phys 73:8–11. https://doi.org/10.1103/PhysRevB.73.23330810.1103/PhysRevB.73.233308 ↗
28. Kepaptsoglou D, Hardcastle TP, Seabourne CR et al (2015) Electronic structure modification of ion implanted graphene: the spectroscopic signatures of p- and n-type doping. ACS Nano 9:11398–11407. https://doi.org/10.1021/acsnano.5b0530510.1021/acsnano.5b05305 ↗
29. Sun S, Fu K, Yu G et al (2016) AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation. Appl Phys Lett 108:1–5. https://doi.org/10.1063/1.493950810.1063/1.4939508 ↗
30. Sedzicki P, Skowronski L, Szczesny R et al (2020) Influence of phosphorus ion implantation on the optical properties of CdTe bulk crystal. J Alloys Compd 844:156002. https://doi.org/10.1016/j.jallcom.2020.15600210.1016/j.jallcom.2020.156002 ↗
31. Novikova NN, Yakovlev VA, Kucherenko IV et al (2018) Infrared Reflection spectra of Pb1–xSnxSe (x = 0.2, 0.34) topological insulator films on a ZnTe/GaAs substrate and the vibrational modes of multilayer structures. Semiconductors 52:34–40. https://doi.org/10.1134/S106378261801017710.1134/S1063782618010177 ↗
32. Ribeiro JM, Correia FC, Kuzmin A et al (2020) Influence of Nb-doping on the local structure and thermoelectric properties of transparent TiO2: Nb thin films. J Alloys Compd 838:155561. https://doi.org/10.1016/j.jallcom.2020.15556110.1016/j.jallcom.2020.155561 ↗
33. Sun X, Gao K, Pang X et al (2015) Structure and composition effects on electrical and optical properties of sputtered PbSe thin films. Thin Solid Films 592:59–68. https://doi.org/10.1016/j.tsf.2015.09.00910.1016/j.tsf.2015.09.009 ↗
34. Biesinger MC, Lau LWM, Gerson AR, Smart RSC (2010) Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn. Appl Surf Sci 257:887–898. https://doi.org/10.1016/j.apsusc.2010.07.08610.1016/j.apsusc.2010.07.086 ↗
35. Strauss AJ (1967) Inversion of conduction and valence bands in Pb1-xsnxse alloys. Phys Rev 157:608–611. https://doi.org/10.1103/PhysRev.157.60810.1103/PhysRev.157.608 ↗
36. Ashraf MT, Salah NA, Rafat M et al (2017) Studies on selenium rich Lead Chalcogenide Pb5Se95−xZnx (X =0, 2.5, 5, and 10) thin films composed of NPs. Mater Sci Semicond Process 60:53–59. https://doi.org/10.1016/j.mssp.2016.12.02710.1016/j.mssp.2016.12.027 ↗
37. Fritzsche H (1984) Noncrystalline semiconductors10.1063/1.2915913 ↗
38. Ren Y, Dai T, Luo W et al (2018) Evidences of sensitization mechanism for PbSe thin films photoconductor. Vacuum 149:190–194. https://doi.org/10.1016/j.vacuum.2017.12.01710.1016/j.vacuum.2017.12.017 ↗