Piezoelectric and optoelectronic properties of α-In2Se3 single-crystal nanobelts synthesized by a direct selenization of In2O3
Source abstract
Abstract
Indium selenide (In2Se3) is an attractive layered semiconductor material with promising optoelectronic and piezoelectric applications. In this work, single-crystalline α-In2Se3 nanobelts are synthesized using a catalyst-free chemical vapor deposition method through the direct selenization of In2O3 powders. The as-grown nanobelts are single crystals with high crystallinity and regular outer shapes. The piezoelectric response d33 of a 50 nm-thick α-In2Se3 nanobelt is, for the first time, determined to be approximately 1.6 pm·V−1. The photodetector using the In2Se3 nanobelts exhibits high photoresponsivity of 66.6 A·W−1 at 442 nm and high stability under an atmospheric environment. This work provides a new route for the development of α-In2Se3 nanobelts as promising candidates for low-cost, nanoscale actuators, sensors, and detectors.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Advanced Thermoelectric Materials and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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