Synthesis of linear ZnO structures by a thermal decomposition method and their characterisation
Source abstract
Abstract
The semiconductor zinc oxide (ZnO) is a promising material for applications in optoelectronics, photochemistry and chemical sensing. Furthermore, ZnO structures can be grown with a large variety of sizes and shapes. Devices with ZnO rods or wires as their core elements can be used in solar cells, gas sensors or biosensors. In this article, an easy approach for the non-aqueous wet chemical synthesis of ZnO structures is presented that employs the solvent trioctylamine (TOA) and the surfactant hexamethylenetetramine (HMTA). Using the thermal decomposition method, rod-shaped structures were grown that are suitable for the fabrication of electrical devices. A detailed study was carried out to investigate the effects of various reaction parameters on the growth process. Both the concentration of the surfactant HMTA and the zinc precursor zincacetylacetonate (Zn(acac) 2) were found to show strong effects on the resulting morphology. In addition to structural characterisation using XRD, SEM and TEM, also optical properties of rod-shaped ZnO structures were measured. Rod-shaped structures were obtained for the following conditions: reaction time 4 h, reaction temperature 70 °C, 1 mmol of Zn(acac) 2, 4 mmol of HMTA and 25 mL of the solvent TOA. Photoluminescence and photoluminescence excitation spectroscopy of samples grown under these conditions provided information on levels of defect states that could be critical for chemical sensing applications. Two narrow peaks around 254 and 264 nm were found that are well above the band gap of ZnO.
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Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (60)
Show source-provided references
1. Wang ZL (2004) J Phys Condens Matter 16:R82910.1088/0953-8984/16/25/R01 ↗
2. Lu JG, Chang P, Fan Z (2006) Mater Sci Eng R 52:4910.1016/j.mser.2006.04.002 ↗
3. Shen G, Chen P-C, Ryu K, Zhou C (2009) J Mater Chem 19:82810.1039/B816543B ↗
4. Huang MH, Mao S, Feick HN, Yan HQ, Wu YY, Kind H, Weber E, Russo R, Yang PD (2001) Science 292:189710.1126/science.1060367 ↗
5. Kong YC, Yu DP, Zhang B, Fang W, Feng SQ (2001) Appl Phys Lett 78:40710.1063/1.1342050 ↗
6. Look DC (2001) Mater Sci Eng B 80:38310.1016/S0921-5107(00)00604-8 ↗
7. Marci G, Augugliaro V, Lopez-Munoz M, Martin C, Palmisano L, Rives V, Schiavello M, Tilley RJD, Venezia AM (2001) J Phys Chem B 105:102610.1021/jp003172r ↗
8. Jiao CM, Chen X (2009) J Therm Anal Calorim 98:81310.1007/s10973-009-0197-y ↗
9. Zhang WD, Zhang WH, Ma XY (2009) J Mater Sci 44:4677. doi: 10.1007/s10853-009-3716-010.1007/s10853-009-3716-0 ↗
10. Patil SB, Singh AK (2010) J Mater Sci 45:5204. doi: 10.1007/s10853-010-4559-410.1007/s10853-010-4559-4 ↗
11. Eranna G, Joshi BC, Runthala DP, Gupta RP (2004) Crit Rev Solid State Mater Sci 29:11110.1080/10408430490888977 ↗
12. Shalish I, Temkin H, Narayanamurti V (2004) Phys Rev B 69:245401/110.1103/PhysRevB.69.245401 ↗
13. Kong XH, Li YD (2003) Chem Lett 32:106210.1246/cl.2003.1062 ↗
14. Liu B, Zeng HC (2003) J Am Chem Soc 125:443010.1021/ja0299452 ↗
15. Wang Z, Qian XF, Yin J, Zhu ZK (2004) Langmuir 20:344110.1021/la036098n ↗
16. Ye CH, Bando Y, Fang XS, Shen G, Golberg D (2007) J Phys Chem C 111:1267310.1021/jp073928n ↗
17. Yang JH, Qiu YF, Yang SH (2007) Cryst Growth Des 7:256210.1021/cg070513i ↗
18. Wang M, Kim EJ, Hahn SH, Park C, Koo KK (2008) Cryst Growth Des 8:50110.1021/cg070467m ↗
19. Kong XY, Ding Y, Yang R, Wang ZL (2004) Science 303:134810.1126/science.1092356 ↗
20. Hughes WL, Wang ZL (2004) J Am Chem Soc 126:670310.1021/ja049266m ↗
21. Pan ZW, Dai ZR, Wang ZL (2001) Science 291:194710.1126/science.1058120 ↗
22. Yan HQ, He RR, Johnson J, Law M, Saykally RJ, Yang PD (2003) J Am Chem Soc 125:472810.1021/ja034327m ↗
23. Kar S, Pal BN, Chaudhuri S, Chakravorty D (2006) J Phys Chem B 110:460510.1021/jp056673r ↗
24. Shu Y, Tsugio S (2005) J Mater Chem 15:458410.1039/b512239b ↗
25. Mo MS, Wang DB, Du XS, Ma J, Qian XF, Chen DP, Qian YT (2009) Cryst Growth Des 9:79710.1021/cg800362z ↗
26. Wang ZL, Kong XY, Zuo JM (2003) Phys Rev Lett 91:18550210.1103/PhysRevLett.91.185502 ↗
27. Zhang J, Sun L, Liao C, Yan C (2002) Chem Commun 2002:26210.1039/b108863g ↗
28. Zhang JH, Liu HY, Wang ZL, Ming NB, Li ZR, Biris AS (2007) Adv Funct Mater 17:389710.1002/adfm.200700734 ↗
29. Li J, Guicun L, Qianmao J, Hongrui P (2007) Mater Lett 61:196410.1016/j.matlet.2006.07.167 ↗
30. Ghoshal T, Kar S, Chaudhuri S (2007) Cryst Growth Des 7:13610.1021/cg060289h ↗
31. Lao JY, Huang JY, Wang DZ, Ren ZF (2004) J Mater Chem 14:77010.1039/b311639e ↗
32. Song RQ, Xu AW, Deng B, Li Q, Chen GY (2007) Adv Funct Mater 17:29610.1002/adfm.200600024 ↗
33. Tian ZRR, Voigt JA, Liu J, Mckenzie B, Mcdermott MJ (2002) J Am Chem Soc 124:1295410.1021/ja0279545 ↗
34. Huang MH, Wu Y, Feick H, Tran N, Weber E, Yang P (2001) Adv Mater 13:11310.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H ↗
35. Vayssieres L, Keis K, Lindquist SE, Hagfeldt A (2001) J Phys Chem B 105:335010.1021/jp010026s ↗
36. Devarepally KK, Babita B, Manorama SV (2006) Sens Actuators B 119:67610.1016/j.snb.2006.01.028 ↗
37. Lupan O, Ursaki VV, Chai G, Chow L, Emelchenko GA, Tiginyanu IM, Gruzintsev AN, Redkin AN (2010) Sens Actuators B 144:5610.1016/j.snb.2009.10.038 ↗
38. Zheng MJ, Zhang LD, Li GH, Shen WZ (2002) Chem Phys Lett 363:12310.1016/S0009-2614(02)01106-5 ↗
39. Greene LE, Yuhas BD, Law M, Zitoun D, Yang P (2006) Inorg Chem 45:753510.1021/ic0601900 ↗
40. Wahab R, Kim YS, Lee K, Shin HS (2010) J Mater Sci 45:2967. doi: 10.1007/s10853-010-4294-x10.1007/s10853-010-4294-x ↗
41. Munoz-Hernandez G, Escobedo-Morales A, Pal U (2009) Cryst Growth Des 9:29710.1021/cg8004807 ↗
42. Andelman T, Gong Y, Polking M, Yin M, Kuskovsky I, Neumark G, O’Brien S (2005) J Phys Chem B 109:1431410.1021/jp050540o ↗
43. Famengo A, Anantharaman S, Ischia G, Causin V, Natile MM, Maccato C, Tondello E, Bertagnolli H, Gross S (2009) Eur J Inorg Chem 2009:501710.1002/ejic.200900506 ↗
44. Wu J-J, Liu S-C, Wu C-T, Chen K-H, Chen L-C (2002) Appl Phys Lett 81:131210.1063/1.1499512 ↗
45. Maldonado A, Olvera MDL, Asomoza R, Tirado-Guerra S (2001) J Mater Sci Mater Electron 12:62310.1023/A:1013107332029 ↗
46. Fauteux C, Longtin R, Pegna J, Therriault D (2007) Inorg Chem 46:1103610.1021/ic700915z ↗
47. Horcas I, Fernandez R, Gomez-Rodriguez JM, Colchero J, Gomez-Herrero J, Baro AM (2007) Rev Sci Instrum 78:01370510.1063/1.2432410 ↗
48. Barros BS, Barbosa R, dos Santos NR, Barros TS, Souza MA (2006) Inorg Mater 42:134810.1134/S0020168506120119 ↗
49. Wu XL, Siu GG, Fu CL, Ong HC (2001) Appl Phys Lett 78:228510.1063/1.1361288 ↗
50. De la Rosa E, Sepúlveda-Guzman S, Reeja-Jayan B, Torres A, Salas P, Elizondo E, Yacaman JM (2007) J Phys Chem C 111:848910.1021/jp071846t ↗
51. Djurisic AB, Leung YH, Tam KH, Ding L, Ge WK, Chen HY, Gwo S (2006) Appl Phys Lett 88:10310710.1063/1.2182096 ↗
52. Xiong G, Pal U, Serrano JG (2007) J Appl Phys 101:02431710.1063/1.2424538 ↗
53. Escobedo-Morales A, Pal U (2008) Appl Phys Lett 93:19312010.1063/1.3026746 ↗
54. Li Y, Li WF, Xu G, Ma XL, Cheng HM (2008) J Mater Sci 43:1711. doi: 10.1007/s10853-007-2344-910.1007/s10853-007-2344-9 ↗
55. Djurisic AB, Choy WCH, Roy VAL, Leung YH, Kwong CY, Cheah KW, Rao TKG, Chan WK, Lui HF, Surya C (2004) Adv Funct Mater 14:85610.1002/adfm.200305082 ↗
56. Irimpan L, Nampoori VPN, Radhakrishnan P, Deepthy A, Krishnan B (2007) J Appl Phys 102:06352410.1063/1.2778637 ↗
57. Hung C-H, Whang W-T (2003) Mater Chem Phys 82:70510.1016/S0254-0584(03)00331-6 ↗
58. Pal U, Santiago P (2005) J Phys Chem B 109:1531710.1021/jp052496i ↗
59. Meng XQ, Shen DZ, Zhang JY, Zhao DX, Lu YM, Dong L, Zhang ZZ, Liu YC, Fan XW (2005) Solid State Commun 135:17910.1016/j.ssc.2005.04.015 ↗
60. Heo YW, Norton DP, Pearton SJ (2005) J Appl Phys 98:07350210.1063/1.2064308 ↗