Optimized Doping of Diffusion Blocking Layers and Their Impact on the Performance of Perovskite Photovoltaics

High Resolution Image Download MS PowerPoint Slide The roll-to-roll printing production process for hybrid organic–inorganic perovskite solar cells (PSCs) demands thick and high-performance solution-based diffusion blocking layers. Inverted (p-i-n) PSCs usually incorporate solution-processed PC 70 BM as the electron-transporting layer (ETL), which offers good electron charge extraction and passivation of the perovskite active layer grain boundaries. Thick fullerene diffusion blocking layers could benefit the long-term lifetime performance of inverted PSCs. However, the low conductivity of PC 70 BM significantly limits the thickness of the PC 70 BM buffer layer for optimized PSC performance. In this work, we show that by applying just enough N -DMBI doping principle, we can maintain the power conversion efficiency (PCE) of inverted PSCs with a thick (200 nm) PC 70 BM diffusion blocking layer. To better understand the origin of an optimal doping level, we combined the experimental results with simulations adapted to the PSCs reported here. Importantly, just enough 0.3% wt N -DMBI-doped 200 nm PC 70 BM diffusion blocking layer-based inverted PCSs retain a high thermal stability at 60 °C of up to 1000 h without sacrificing their PCE photovoltaic parameters.