Microstructuring GaAs Using Reverse-Patterning Lithography: Implications for Transistors and Solar Cells
Source abstract
Abstract
This paper introduces reverse patterning lithography (RPL), which combines microcontact printing (μCP) of a custom-designed fluorinated adsorbate on gallium arsenide (GaAs) and the deposition of a polymeric resin as a wet-etching resist. Positive patterns were formed on GaAs wafers having various designed shapes and sharp edges at a lateral resolution of 100.0 μm and a depth of up to 3.0 μm. The RPL method benefits from being cost-effective and time-efficient compared to conventional photolithography and has the potential for use in the fabrication of various GaAs devices, including solar cells, light-emitting diodes, and microwave and radio frequency transistors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanofabrication and Lithography Techniques · Advancements in Photolithography Techniques · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, the Texas Center for Superconductivity, and the Advanced Manufacturing Institute, University of Houston, Houston, Texas 77204-5003, United States
Department of Mechanical Engineering, the Texas Center for Superconductivity, and the Advanced Manufacturing Institute, University of Houston, Houston, Texas 77204-4006, United States
Funding
Division of Chemistry · Welch Foundation · Texas Center for Superconductivity, University of Houston · Advanced Manufacturing Institute, University of Houston
References (30)
Show source-provided references
1. Nagatsuma, T.; Kasamatsu, A. In Terahertz Communications for Space Applications, 2018 Asia-Pacific Microwave Conference (APMC), 6–9 Nov 2018; pp 73–75.10.23919/APMC.2018.8617598 ↗
2. 10.1109/TMTT.2014.238706110.1109/TMTT.2014.2387061 ↗
3. 10.1063/1.159074310.1063/1.1590743 ↗
4. 10.1038/nature0905410.1038/nature09054 ↗
5. 10.1002/pip.297810.1002/pip.2978 ↗
6. Chen, W.; Wang, Z.; Chen, X.; Zhang, S. Radio frequency power amplifier for wireless communication. In Microwave Wireless Communications, 2016; pp 261–300.10.1016/B978-0-12-803894-9.00006-8 ↗
7. Liu, i.; Ma, K.; Mou, S.; Meng, F. A review of recent power amplifier IC. In 2017 10th Global Symposium on Millimeter-Waves, 2017; pp 87–91.10.1109/GSMM.2017.7970329 ↗
8. Asadirad, M.; Rathi, M.; Pouladi, S.; Yao, Y.; Dutta, P.; Shervin, S.; Lee, K. H.; Zheng, N.; Ahrenkiel, P.; Selvamanickam, V.; Ryou, J.H. III-V thin-film photovoltaic solar cells based on single-crystal-like GaAs grown on flexible metal tapes. In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC); IEEE: Portland, OR, 2016; pp 1954–1956.10.1109/PVSC.2016.7749967 ↗
9. 10.1002/pip.307010.1002/pip.3070 ↗
10. 10.1134/S106378421108021410.1134/S1063784211080214 ↗
11. 10.1007/s00339-015-9071-x10.1007/s00339-015-9071-x ↗
12. 10.1038/nprot.2009.23410.1038/nprot.2009.234 ↗
13. 10.1109/TED.2005.85181110.1109/TED.2005.851811 ↗
14. 10.1016/j.apsusc.2016.11.01610.1016/j.apsusc.2016.11.016 ↗
15. 10.1021/ja00030a07610.1021/ja00030a076 ↗
16. 10.1016/j.colsurfa.2011.09.02010.1016/j.colsurfa.2011.09.020 ↗
17. 10.1021/ar200020s10.1021/ar200020s ↗
18. 10.1021/acs.langmuir.7b0397310.1021/acs.langmuir.7b03973 ↗
19. 10.1021/la700902h10.1021/la700902h ↗
20. 10.1021/acs.chemmater.6b0139010.1021/acs.chemmater.6b01390 ↗
21. 10.1021/jp410280y10.1021/jp410280y ↗
22. 10.1021/acs.jpcc.5b0706710.1021/acs.jpcc.5b07067 ↗
23. 10.1021/jp040474a10.1021/jp040474a ↗
24. Moulder J. F. · 1992
25. 10.1021/la020909q10.1021/la020909q ↗
26. 10.1021/ja058657d10.1021/ja058657d ↗
27. 10.1021/jp065173a10.1021/jp065173a ↗
28. 10.1016/j.ijadhadh.2008.09.00810.1016/j.ijadhadh.2008.09.008 ↗
29. 10.1021/acsanm.9b0126810.1021/acsanm.9b01268 ↗
30. 10.1038/s41598-017-00497-x10.1038/s41598-017-00497-x ↗