Solution-processed mixed halide CH3NH3PbI3−xClx thin films prepared by repeated dip coating
Source abstract
Abstract
The mixed halide CH3NH3PbI3−xClx crystalline thin film has been prepared by two-step solution-processed repeated dip coating method at an ambient atmosphere. X-ray diffraction study reveals the presence of tetragonal and cubic phases in deposited film. Raman study confirms the metal halide bond in the inorganic framework and organic CH3 stretching/bending of C–H bond in CH3NH3PbI3−xClx perovskite. Scanning electron microscopy shows that cuboid and polyhedral-like crystal grains of 100 nm to 2 μm may find applications in optoelectronics. The perovskite CH3NH3PbI3−xClx thin film shows high spectral absorption coefficient of the order of 106 m−1. In optical band gap study, we found the coexistence of cubic and tetragonal perovskite phases. The energy band gap is dominated by cubic phase having Eg = 2.50 eV over tetragonal phase with band gap Eg = 1.67 eV. The room-temperature photoluminescence study confirms band edge, shallow and deep-level emissions. The temperature-dependent cathodoluminescence study shows red, green and ultraviolet emissions. The dominating green luminescence evolved for cubic phase at 2.51 eV. The red and ultraviolet emissions are also found for mixed-phase CH3NH3PbI3−xClx thin film, suitable for preparation of light-emitting devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Perovskite Materials and Applications · Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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