journal article·2014-02

Enhanced dielectric and tunable properties of barium strontium titanate thin films through introducing Nd(Zn1/2Ti1/2)O3 and adjusting Ba/Sr

Xiaohua Sun, Ying Yang, Qiaoling Zhang, Xin Zhou, Zongzhi Hu, Caihua Huang

Journal of Materials Science· Volume 49· Issue 3
Publisher page

Abstract

Ba0.6Sr0.4TiO3 (BST) and 0.06Nd(Zn1/2Ti1/2)O3–0.94Ba x Sr1−x TiO3 (NZT–BST) thin films with x = 0.6, 0.7, 0.75, and 0.8 were fabricated on Pt/Ti/SiO2/Si substrates by sol–gel method. The structures, surface morphology, dielectric, and ferroelectric properties, and thermal stability of BST and NZT–BST thin films were investigated as a function of NZT and Ba content. It was found that introducing NZT into BST decreased significantly dielectric loss, however, along with the tunability. On this basis, increasing Ba/Sr in NZT–BST thin films led to the simultaneous increase of dielectric constant and tunability of thin films. As a result, optimized dielectric and tunable properties were obtained for 0.06Nd(Zn1/2Ti1/2)O3–0.94Ba0.7Sr0.3TiO3 thin film with the highest FOM value of 43.22. It awakens us that, for reducing dielectric loss, introducing a certain amount of low permittivity oxides or non-ferroelectrics like NZT into weak ferroelectric perovskite tunable materials, not into paraelectric perovskite tunable materials, may obtain more excellent dielectric and tunable performances.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (37)

Show source-provided references
1. Cole MW, Weiss CV, Ngo E, Hirsch S, Coryell LA, Alpay SP (2008) Appl Phys Lett 92:18290610.1063/1.2919080 ↗
2. Tagantsev A, Sherman V, Astafiev K, Venkatesh J, Setter N (2003) J Electroceram 11:510.1023/B:JECR.0000015661.81386.e6 ↗
3. Lancaster M, Powell J, Porch A (1998) Thin-film ferroelectric microwave devices. Supercond Sci Technol 11:132310.1088/0953-2048/11/11/021 ↗
4. Lee O, Harrington SA, Kursumovic A, Defay E, Wang H, Bi Z, Tsai CF, Yan L, Jia Q, MacManus-Driscoll JL (2012) Nano Lett 12:431110.1021/nl302032u ↗
5. Xiong N, Jiang S, Li Y, Tan L, Li R (2008) Appl Phys Lett 93:23290310.1063/1.3037223 ↗
6. Setter N, Damjanovic D, Eng L, Fox G, Gevorgian S, Hong S, Kingon A, Kohlstedt H, Park NY, Stephenson GB, Stolitchnov I, Taganstev AK, Taylor DV, Yamada T, Streiffer S (2006) J Appl Phys 100:05160610.1063/1.2336999 ↗
7. Gim Y, Hudson T, Fan Y, Kwon C, Findikoglu AT, Gibbons BJ, Park BH, Jia QX (2000) Appl Phys Lett 77:120010.1063/1.1289272 ↗
8. Wang SY, Cheng BL, Wang C, Lu HB, Zhou YL, Chen ZH, Yang GZ (2003) J Cryst Growth 259:13710.1016/j.jcrysgro.2003.07.023 ↗
9. Kim KT, Kim CI (2005) Thin Solid Films 472:2610.1016/j.tsf.2004.05.128 ↗
10. Zhu X, Zheng D, Peng W, Li J, Chen Y (2006) Mater Lett 60:122410.1016/j.matlet.2005.11.004 ↗
11. Zhang Q, Zhai J, Yao X (2011) J Am Ceram Soc 94:113810.1111/j.1551-2916.2010.04165.x ↗
12. Zhang Q, Qi P, Zhai J, Fu F, Yao X (2011) Mater Res Bull 46:73810.1016/j.materresbull.2011.01.011 ↗
13. He Y, Xu Y, Liu T, Zeng C, Chen W (2011) J Alloy Compd 509:90410.1016/j.jallcom.2010.09.128 ↗
14. Sun X, Yang Y, Zhang Q, Hou S, Huang C, Hu Z, Zou J, Li M, Peng T (2013) J Am Ceram Soc 96:82010.1111/jace.12112 ↗
15. Liao W, Liang R, Wang G, Cao F, Dong X (2011) Appl Phys Lett 99:20290310.1063/1.3660248 ↗
16. Yang J, Meng XJ, Shen MR, Sun JL, Chu JH (2009) J Appl Phys 106:09410610.1063/1.3253740 ↗
17. Teranishi T, Hoshina T, Takeda H, Tsurumi T (2009) J Appl Phys 105:05411110.1063/1.3089250 ↗
18. Zhu X, Zhu J, Zhou S, Liu Z, Ming N, Chan HL-W, Choy C-L, Wong K-H, Hesse D (2005) Mater Sci Eng B 118:21910.1016/j.mseb.2004.12.033 ↗
19. Miao J, Chen W, Zhao L, Chen B, Yang H, Peng W, Zhu X, Xu B, Cao L, Qiu X, Zhao B (2004) J Appl Phys 96:657810.1063/1.1806254 ↗
20. Adikary SU, Chan HLW (2004) J Mater Sci 39:6523. doi: 10.1023/B:JMSC.0000044891.01580.0010.1023/B:JMSC.0000044891.01580.00 ↗
21. Cole MW, Hubbard C, Ngo E, Ervin M, Wood M, Geyer RG (2002) J Appl Phys 92:47510.1063/1.1484231 ↗
22. Cole MW, Joshi PC, Ervin MH (2001) J Appl Phys 89:633610.1063/1.1366656 ↗
23. Zhang M, Zhai J, Zhang J, Jiang H, Yao X (2011) Mater Res Bull 46:110210.1016/j.materresbull.2011.02.046 ↗
24. Yang J, Chu J, Shen M (2007) Appl Phys Lett 90:24290310.1063/1.2748081 ↗
25. Jain M, Majumder SB, Katiyar RS, Miranda FA, Van Keuls FW (2003) Appl Phys Lett 82:191110.1063/1.1560861 ↗
26. Tang XG, Wang XX, Chew KH, Chan HLW (2005) Solid State Commun 136:8910.1016/j.ssc.2005.06.034 ↗
27. Miao J, Hooi Chew K, Jiang Y (2011) Appl Phys Lett 99:23291010.1063/1.3666021 ↗
28. Bastani Y, Schmitz-Kempen T, Roelofs A, Bassiri-Gharb N (2011) J Appl Phys 109:01411510.1063/1.3527970 ↗
29. Ihlefeld JF, Folkman CM, Baek SH, Brennecka GL, George MC, Carroll JF, Eom CB (2010) Appl Phys Lett 97:26290410.1063/1.3533017 ↗
30. Zhu W, Fujii I, Ren W, Trolier-McKinstry S (2011) J Appl Phys 109:06410510.1063/1.3552298 ↗
31. Sahoo SK, Misra D, Sahoo M, MacDonald CA, Bakhru H, Agrawal DC, Mohapatra YN, Majumder SB, Katiyar RS (2011) J Appl Phys 109:06410610.1063/1.3553885 ↗
32. Fang L, Shen M, Yang J, Li Z (2006) Solid State Commun 137:38110.1016/j.ssc.2005.12.004 ↗
33. Jain M, Majumder SB, Katiyar RS, Agrawal DC, Bhalla AS (2002) Appl Phys Lett 81:3212321410.1063/1.1515879 ↗
34. Chang WT, Sengupta L (2002) J Appl Phys 92:394110.1063/1.1505669 ↗
35. Liou JW, Chiou BS (1997) Mater Chem Phys 51:5910.1016/S0254-0584(97)80267-2 ↗
36. Zhang S-T, Lu M-H, Chen Y-F, Liu Z-G, Ming N-B, Wang J, Cheng G-X (2006) Appl Phys Lett 88:09290110.1063/1.2179616 ↗
37. Liu C, Liu P, Yao GG, Bian XB, Jing HX, Lu XG, Gao CJ (2011) Mater Res Bull 46:151010.1016/j.materresbull.2011.04.029 ↗