Interface Barrier-Modulated Neuromorphic Behavior in Mo/CdIn2S4/ZnO–Al Structures Based on Metastable Defects
Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide Neuromorphic computing is an increasingly accelerating research field that still faces several hardware challenges, thus driving materials science research. This contribution presents prototype neuromorphic devices based on cadmium–indium sulfide (CdIn 2 S 4 ). We have found that the compound, previously studied in photocatalysis and photovoltaics, has yet-to-be-explored memristive properties. We manufactured a series of devices with varying stoichiometry and unveiled their switching and neuromorphic behavior. Our measurements indicate that barriers on the CdIn 2 S 4 interfaces and native CdIn 2 S 4 metastable defects control the behavior of the devices. Due to its compelling optoelectronic properties, CdIn 2 S 4 creates vast opportunities to use it as an active layer for optically controlled neuromorphic devices. We propose a disparate switching mechanism based on metastable defects that could be utilized in neuromorphic device technology.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Chalcogenide Semiconductor Thin Films · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
CNRS, Institut des Matériaux de Nantes Jean Rouxel, IMN
Nantes Université
Funding
Politechnika Warszawska
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