DataVXACS Applied Electronic MaterialsPaper
journal article·2025-03-11

Temperature Dependence of the Electronic Band Structure in Layered γ-InSe

Runze Liu, Fanxiang Meng, Yi Lian, Yichen Yang, Zhengtai Liu, Jingwei Dong, Zhongwei Chen

ACS Applied Electronic Materials· Volume 7· Issue 5
Publisher page
Source abstract

Abstract

Indium selenide (InSe), a layered semiconductor, has garnered significant attention for its exceptional properties, particularly in the field of optoelectronics. While temperature variations have been shown to influence the electronic band structure of InSe, the underlying mechanisms driving these changes remain insufficiently explained. In this study, we investigated the temperature-dependent electronic band structure of InSe using angle-resolved photoelectron spectroscopy (ARPES), quantitatively characterizing the valence band shifts. Further density functional theory (DFT) calculations reveal that lattice contributions to the band structure vary with temperature: positive contributions from lattices a and b contrast with a negative contribution from lattice c .
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Solid-state spectroscopy and crystallography · 2D Materials and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Science

Dalian Jiaotong University

Power Battery & Systems Research Center

Dalian Institute of Chemical Physics, Chinese Academy of Sciences

State Key Laboratory of Catalysis

Institute of Atomic and Molecular Physics

Jilin University

Shanghai Synchrotron Radiation Facility

Shanghai Advanced Research Institute, Chinese Academy of Sciences

Funding

Natural Science Foundation of Liaoning Province · National Natural Science Foundation of China · Chinese Academy of Sciences · Yulin Innovation Institute of Clean Energy, Chinese Academy of Sciences

References (30)

Show source-provided references
1. 10.1126/science.124650110.1126/science.1246501 ↗
2. 10.1038/nnano.2012.19310.1038/nnano.2012.193 ↗
3. 10.1038/s41586-021-03339-z10.1038/s41586-021-03339-z ↗
4. 10.1038/s41586-023-05797-z10.1038/s41586-023-05797-z ↗
5. 10.1038/nature0423310.1038/nature04233 ↗
6. 10.1038/nmat184910.1038/nmat1849 ↗
7. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
8. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
9. 10.1021/nl500808510.1021/nl5008085 ↗
10. 10.1021/nn501226z10.1021/nn501226z ↗
11. 10.1002/adma.20150088910.1002/adma.201500889 ↗
12. 10.1021/nl500817g10.1021/nl500817g ↗
13. 10.1021/nn405036u10.1021/nn405036u ↗
14. 10.1039/C5NR00400D10.1039/C5NR00400D ↗
15. 10.1038/nnano.2016.24210.1038/nnano.2016.242 ↗
16. 10.1002/adom.20150019010.1002/adom.201500190 ↗
17. 10.1002/smll.20140010410.1002/smll.201400104 ↗
18. 10.1039/C7TC03698A10.1039/C7TC03698A ↗
19. 10.1021/acsnano.9b0714410.1021/acsnano.9b07144 ↗
20. 10.1073/pnas.200828211710.1073/pnas.2008282117 ↗
21. 10.1103/PhysRevLett.125.15680210.1103/PhysRevLett.125.156802 ↗
22. 10.1021/acs.nanolett.6b0203510.1021/acs.nanolett.6b02035 ↗
23. 10.1016/j.apsusc.2024.16169710.1016/j.apsusc.2024.161697 ↗
24. 10.1016/j.mssp.2019.10486210.1016/j.mssp.2019.104862 ↗
25. 10.1063/1.508649210.1063/1.5086492 ↗
26. 10.1063/1.503225610.1063/1.5032256 ↗
27. 10.1016/j.apsusc.2019.01.29410.1016/j.apsusc.2019.01.294 ↗
28. 10.1103/PhysRevLett.78.139610.1103/PhysRevLett.78.1396 ↗
29. 10.1103/PhysRevB.13.518810.1103/PhysRevB.13.5188 ↗
30. 10.1002/sia.74001010310.1002/sia.740010103 ↗