Theoretical and experimental study of the conduction mechanism in Sb2 Se3 alloy

To understand the nature of Sb2 Se3 semiconductor as a bulk sample, the X-ray diffraction study was carried out to identify the sample structure. Dc and ac electrical properties measured in the temperature range 290–370 K, and frequency range 102–105 Hz were the subject of the present work. Properties such as dielectric constant ζ\, loss function tanδ, and electrical conductivities σac as a function of both frequency and temperature are reported. Different models of electrical conduction in semiconductor materials have been used to explain the observed results. A trail has been made to correlate the results of this paper with the average heat of atomization H S and the average coordination number M. The experimental and theoretical investigation is in accordance with Liang criterion.