High on/off Current Ratio in Dual in-Plane Gate Spin Transistor Based on the V_B Defect Hexagonal BN

With the size of devices based on Si technology approaching its physical limit, the electronics industry is looking for technologies and materials for next-generation electronic devices. In this work, the two-dimensional B vacancy (VB) hexagonal (h)-BNs have been systematically investigated and a dual in-plane gate spin transistor based on the VB defect h-BN is proposed. The results show that the VB defect h-BN has a dynamically stable half-metal property with a large spin band gap 4.66 eV. Interestingly, we also find the VB defect h-BN nanoribbon can transfer from a spin semiconductor to a half-metal due to the π electrons transferring of N located near VB defect under the in-plane external electric field. Moreover, the on/off current ratio of the spin transistor based on the VB defect h-BN can reach 4.18 × 104. Our results may provide a promising approach to build the dual in-plane-gate spin transistor and have potential applications in spin devices.